Site- and energy-controlled pyramidal quantum dot heterostructures
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Femtosecond luminescence measurements combined with pump-probe experiments using selective excitation of either free carriers or excitons have been performed. The time-resolved luminescence spectra show a striking disparity compared with recently published ...
Photoluminescence excitation (PLE) spectroscopy was carried out to investigate the excitation/emission cycle of MBE grown InGaN quantum structures. Quantum well and Stranski-Krastanov type quantum box samples were chosen that emit from blue to red. The ban ...
We have found experimentally that the exciton oscillator strength decreases dramatically with increase of the QW width in a GaN/Al0.07Ga0.93N system. The collapse of the oscillator strength is a manifestation of the polarisation field effect, as confirmed ...
Exciton reflectivity from GaN/AlxGa1-xN quantum wells (QWs) shows broad peaks that are difficult to analyze within a conventional single-free-exciton model. We have applied a new formalism that allows us to separate numerically radiative and inhomogeneous ...
MBE-grown samples containing several GaN-AlxGa1-xN quantum wells of varying widths are studied by picosecond time-resolved photoluminescence. Extremely strong built-in electric fields are present in such systems, due to piezoelectric and pyroelectric effec ...
We have demonstrated ultrafast coherent control of excitons and exciton-polaritons in semiconductor quantum nanostructures. An InGaAs/AlGaAs multi-quantum-well Bragg structure and an AlGaAs/GaAs crescent-shaped quantum wire structure were used as samples f ...
We derive the effective Bose Hamiltonian for a system of interacting excitons applying the Usui transformation. The fermionic nonlinearities are consistently included, leading to a density dependent correction to the kinetic Hamiltonian and to a saturation ...
High-efficiency top-emitting InGaAs/AlGaAs microcavity light-emitting diodes (MCLEDs) have been optimized and fabricated. The structures were grown using molecular beam epitaxy on GaAs substrates. They consist of a three-period Be-doped distributed Bragg r ...
It is shown that both GaN and Ga0.8In0.2N quantum dots (QDs) can be grown by molecular beam epitaxy on silicon or sapphire substrates making use of the strain-induced two-dimensional (2D)-three dimensional (3D) growth mode occurring for mismatched material ...
We report on the experimental observation of excitonic molecules (biexcitons) in high-quality V-shaped quantum wires. By means of spatially resolved near-field photoluminescence spectroscopy, first we unambiguously isolate excitons with a one-dimensional c ...