Contribution to the RF Breakdown in Microwave Devices and its Prediction

In this paper, the RF Breakdown power threshold in arbitrary complex components based on rectangular waveguide technology is investigated. In particular, multipactor (in vacuum) and corona discharge (close to the Paschen curve minimum) are analyzed. The objective has been to predict the RF Breakdown threshold for space applications. The simulation results have been validated with many experimental tests also performed within the frame of this work. The good agreement achieved shows the validity of the approach followed.

Contribution to the RF Breakdown in Microwave Devices and its Prediction

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SPAD Developed in 55 nm Bipolar-CMOS-DMOS Technology Achieving Near 90% Peak PDP

Partial discharge localization in power transformer tanks using machine learning methods

Polarization-enhanced GaN Schottky barrier diodes: Ultra-thin InGaN for high breakdown voltage and low Ron

SPAD Developed in 55 nm Bipolar-CMOS-DMOS Technology Achieving Near 90% Peak PDP

Partial discharge localization in power transformer tanks using machine learning methods

Polarization-enhanced GaN Schottky barrier diodes: Ultra-thin InGaN for high breakdown voltage and low Ron