Gallium arsenide p-i-n radial structures for photovoltaic applications
Related publications (111)
Graph Chatbot
Chat with Graph Search
Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.
DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.
Chemical beam epitaxy (CBE) grown InAsP/InGaAsP edge-emitting laser diodes on GaAs substrates obtained by localised fusion in a nitrogen environment exhibit high quality fused interfaces. A degradation of fused lasers is observed which is attributed to the ...
During the past five years, we have developed in our laboratory a new type of solar cell that is based on a photoelectrochemical process. The light absorption is performed by a monolayer of dye (i.e., a Ruthenium complex) that is adsorbed chemically at the ...
We report on the investigation of In surface segregation in GaInP/GaAs and GaInAs/GaAs heterostructures grown by chemical beam epitaxy (CBE). Owing to the peculiarities of CBE growth, it is shown that In segregation can be quantitatively evaluated in real- ...
The nitridation of sapphire substrates was monitored in situ by reflection high-energy electron diffraction. The evolution of the lattice-mismatch evidences the formation of an AIN relaxed layer when exposing the sapphire surface heated at 850 degrees C to ...
The transformation from pseudomorphic to dislocated and back to pseudomorphic growth with increasing coverage is reported for molecular beam epitaxy of Ag on Pt(111). Below a critical size of 200 Angstrom two-dimensional Ag islands grow coherently strained ...
We examine the room-temperature dispersive and non-dispersive cathodoluminescent (CL) signals produced by an n-InP/n(+)-InP homojunction as a function of excitation beam energy. The non-intentionally doped epilayer of the homojunction is thick enough (2.5 ...
The purpose of this work is to compare for thin film analysis, atomic force microscopy, a recently emerging tool, with well-established nuclear analysis techniques. The comparison is conducted using typical samples of InAs/GaAs heterostructures grown by mo ...
Evaporation of a Cs overlayer in the submonolayer and monolayer regime on a cleaved GaAs(110) surface has been studied by core-level photoemission spectroscopy. The experimental results show three different adsorption regimes deduced from the lineshape of ...
The conditions of splitting the reflectance, transmittance and absorption spectra of a dispersive symmetric Fabry-Perot microcavity are studied on the basis of classical multibeam interference formula, The special case of a monolithic semiconductor microca ...
When a growth interruption is applied to the top interface of a nominally 3 monolayers (ML) thick InAs quantum well (QW), grown on an InP substrate, the InAs layer relaxes by formation of three-dimensional (3D) islands. The emission from the QW is split in ...