Publication

Luminescence and reflectivity of GaN/sapphire grown by MOVPE, GSMBE and HVPE

Related publications (33)

GaN growth on ScAlMgO4 substrates via thermally-dewetted thin Al films

Elison de Nazareth Matioli, Alessandro Floriduz

In this note, we demonstrate the high-temperature growth of GaN on ScAlMgO4 substrates by metalorganic vapor phase epitaxy when a thin Al film is deposited ex situ on the ScAlMgO4 surface, prior to GaN growth. Mirror-like high-quality GaN epitaxial layers ...

IOP Publishing Ltd2022

p-NiO Junction Termination Extensions for High Voltage Vertical GaN Devices

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Alessandro Floriduz, Pirouz Sohi, Luca Nela, Riyaz Mohammed Abdul Khadar, Catherine Erine, Taifang Wang

In this paper, we illustrate the use of RF-sputtered p-NiO to fabricate Junction Termination Extensions (JTEs) for high-performance vertical GaN-on-Si Schottky Barrier Diodes (SBDs). The GaN epitaxial structures were grown on 6-inch Si wafers by MOCVD. The ...

IEEE2021

III-Nitride Semiconductor Photonic Nanocavities on Silicon

Ian Michael Rousseau

Optical nanocavities enhance light-matter interaction due to their high quality factors (Q) and small modal volumes (V). The control of light-matter interaction lies at the heart of potential applications for integrated optical circuits, including optical ...

EPFL2018

Investigation of the In composition in InGaN/GaN quantum wells deposited by MOVPE and/or MBE with emission from violet to green

Nicolas Grandjean, Denis Martin, Nils Asmus Kristian Kaufmann

Transmission electron microscopy and photoluminescence investigations have been carried out on a series of quantum wells grown by molecular beam epitaxy and metal organic vapour phase epitaxy. In both cases, the emission wavelength and the peak width agree ...

2011

Physical Properties of Al1-xInxN/(AIN)/GaN (0.07

Marcus Gonschorek

AlInN is a material which is known to be difficult to be grown among the III-nitride ternary compounds. It attracted much attention only recently and starts to be studied intensively mainly for electronic applications. The aim of this work is manifold. Var ...

EPFL2011

Observation of dodecagon-shape V-defects in GaN/AlInN multiple quantum wells

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Anas Mouti

The microstructure of GaN(Si)/AlInN multiple quantum wells grown on GaN/Al2O3 (0001) templates by metalorganic vapor-phase epitaxy has been investigated using transmission electron microscopy and associated techniques. Dodecagon-shape V-defects with hexago ...

2010

Non-polar GaN epilayers and heterostructures for photonic applications

Tiankai Zhu

This PhD thesis describes the experimental study of wurtzite III-nitride semiconductors grown on non-polar crystal orientations, namely (1120) a- and (1010) m-planes. Hindered by poor material quality, they were not as extensively investigated as the polar ...

EPFL2009

In-Plane Polarities of Nonpolar Wurtzite Epitaxial Films Deposited on m- and r-plane Sapphire Substrates

Nicolas Grandjean, Denis Martin, Tiankai Zhu

The in-plane polarities of GaN and ZnO non-polar films deposited on r- and m-sapphire are compared. The polarity is unique on r-sapphire and mixed on m-sapphire because the direction on the substrate surface parallel to the wurztite c-direction is polar in ...

2009

Physics and applications of intersubband transitions in nitride based heterostructures

Sylvain Nicolay

In the past decades, III-nitride semiconductor compounds have attracted an increasing amount of interest due to their applications to blue-violet laser diodes and white light emitting diodes, or for their use as ultraviolet emitting devices for biomedical ...

EPFL2008

Stress control in GaN/sapphire templates for the fabrication of crack-free thick layers

Nicolas Grandjean, Marc Ilegems, Denis Martin

The reduction of the tensile stress contained in GaN layers grown oil sapphire by metalorganic vapor phase epitaxy (MOVPE) is achieved using a low density of initial GaN crystallites. The template layers exhibit a significant reduction in dislocation densi ...

2006

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