Resonant Raman scattering in (Al,Ga)N/GaN quantum well structures
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The Rayleigh scattering of light at resonance with the ground state exciton transition in quantum wells is studied by means of a microscopic model. The disorder-induced localization of the exciton center-of-mass leads to characteristic features of the scat ...
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We have investigated the thermal stability of GaN using Raman scattering, Noninvasive optical monitoring of the degradation of GaN during high-temperature processing has been demonstrated. GaN samples grown by molecular-beam epitaxy (MBE) and metalorganic ...
We have performed spectral interferometry with Rayleigh scattered light coming from a single speckle and emitted after resonant creation of excitons in GaAs quantum wells:: The experiment confirms the coherence of the secondary emission at early times, reg ...
Room-temperature photoreflectance spectroscopy is performed on a series of GaN-AlGaN quantum wells grown by molecular beam epitaxy. We show that the potentialities of this powerful investigation method previously demonstrated on many low-dimensional system ...
Room-temperature photoreflectance spectroscopy is performed on a series of GaN-AlGaN quantum wells grown by molecular beam epitaxy. We show that the potentialities of this powerful investigation method previously demonstrated to many low-dimensional system ...
Stackings of GaN quantum dots embedded in an AlN matrix, constituting periodic structures with a mean aluminum content in the 80%-90% range, have been investigated by Raman spectroscopy under excitation in the visible range, i.e., far from resonant conditi ...
