Resonant Raman scattering in (Al,Ga)N/GaN quantum well structures
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AlGaN/GaN quantum well (QWs) were grown on (0001) sapphire substrates by molecular beam epitaxy (MBE) using ammonia as nitrogen precursor. The Al composition in the barriers was varied between 8 and 27 % and the well thickness from 4 to 17 monolayers (MLs, ...
P doping of gallium nitride by incorporation of magnesium in the layers was controlled recently. Only Popovici et al. [1] have published the results of a Raman study on p type GaN. In the present communication, we report on the interaction of the free hole ...
We report on Raman scattering experiments performed on GaN-AlGaN quantum well structures, using various ultraviolet excitations. Under near resonant conditions we observe an important enhancement of the multi-LO phonon scattering in the wells or in the bar ...
NH3 is used as a nitrogen precursor for growing III-V nitride materials by molecular beam epitaxy on c-plane sapphire substrates. The sapphire nitridation step is followed in situ by reflection high-energy electron diffraction. Subsequently, it is demonstr ...
GaN/AlxGa1-xN quantum wells (QWs) are grown by molecular beam epitaxy (MBE) on c-plane sapphire substrates. Both the Al composition and the well thickness are determined in situ from reflection high-energy electron diffraction intensity oscillations. It is ...
Ammonia as nitrogen precursor has been used to grow m-V nitrides by molecular beam epitaxy (MBE) on c-plane sapphire substrates. The efficiency of NH3 has been evaluated allowing the determination of the actual V/III flux ratio used during the GaN growth. ...
Chemical beam epitaxy (CBE) grown InAsP/InGaAsP edge-emitting laser diodes on GaAs substrates obtained by localised fusion in a nitrogen environment exhibit high quality fused interfaces. A degradation of fused lasers is observed which is attributed to the ...
