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InGaN/GaN quantum wells grown by molecular beam epitaxy emitting at 300 K in the whole visible spectrum

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InGaN/GaN quantum wells grown by molecular beam epitaxy emitting at 300 K in the whole visible spectrum

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Burying non-radiative defects in InGaN underlayer to increase InGaN/GaN quantum well efficiency

Calcium impurity as a source of non-radiative recombination in (In,Ga)N layers grown by molecular beam epitaxy

Optical properties of nearly lattice-matched GaN/(Al,In)N quantum wells

Optimization of NH₃-MBE grown p-doped (Al)GaN layers and their implementation in long wavelength laser diodes and tunnel junctions

InGaN laser diodes emitting at 500 nm with p-layers grown by molecular beam epitaxy

Advantages and remaining issues of state-of-the-art m-plane freestanding GaN substrates grown by halide vapor phase epitaxy for m-plane InGaN epitaxial growth

Thermal carrier emission and nonradiative recombinations in nonpolar (Al,Ga)N/GaN quantum wells grown on bulk GaN

Determination of the band gap and the split-off band in wurtzite GaAs using Raman and photoluminescence excitation spectroscopy

Testing the Temperature Limits of GaN-Based HEMT Devices

Non-polar GaN epilayers and heterostructures for photonic applications