Blue resonant cavity light emitting diodes with a high-Al-content GaN/AlGaN distributed Bragg reflector
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A quantum dot is a semiconductor nanostructure that confines the motion of conduction band electrons and valence band holes in all three spatial directions, thus creating fully discrete energy levels. The confinement in the InAs/GaAs material system is gen ...
Gallium Nitride (GaN) and its ternary alloys with aluminium and indium have met a growing interest in the last decade. These semiconductors have a large direct bandgap and can be doped with either silicon (Si) for n-type and magnesium (Mg) for p-type layer ...
Optical fiber materials with broad-band gain in the visible or in the telecommunication window are of great interest for optical communication or the biomedical domain in order to built integrated tunable lasers, amplifiers, ultra-short pulse lasers, or br ...
This work explores the impact of cavity thickness, photonic crystal etch depth, and quantum well placement on the extraction efficiency and emission directionality of thin-film InGaN photonic crystal light-emitting diodes (LEDs). ...
Gallium nitride (GaN) is one of the most interesting materials for devices applications such as blue light emitting diodes, laser diodes and high power and high temperature electronic applications, because of its large band gap (3.39 eV). Several growth te ...
The mid-infrared range is of interest in spectroscopic applications, due to the large number of organic compounds that exhibit characteristic absorption bands in this spectral region. Semiconductor technology, however, has been developed mainly for the nea ...
We observe a room-temperature low-threshold transition to a coherent polariton state in bulk GaN microcavities in the strong-coupling regime. Nonresonant pulsed optical pumping produces rapid thermalization and yields a clear emission threshold of 1 mW, co ...
A light-emitting device comprising a substrate-supported Group III nitride semiconductor region having a p-n junction region for injecting carriers into an optically active region, wherein the p-n junction region comprises an aluminum indium gallium nitrid ...
Record fundamental mode output power of 8mW at 0 degrees C and 6.5mW at room temperature is achieved with wafer-fused VCSELs incorporating regrown tunnel junction and emitting at the 1550nm waveband. (C) 2009 Optical Society of America ...
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Novel light-emitting devices and micro-optical-circuit elements will rely upon understanding and control of light-matter interaction at the nanoscale. Recent advances in nanofabrication and micro-processing make it possible to develop integrable solid-stat ...