Publication

Progress in AlInN-GaN Bragg reflectors: Application to a microcavity light emitting diode

Related publications (49)

About
Privacy
Disclaimer

Graph Chatbot

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

Progress in AlInN-GaN Bragg reflectors: Application to a microcavity light emitting diode

Graph Chatbot

Chat with Graph Search

Study of growth-induced point defects and their impact on InGaN-based optoelectronic devices

Direct high-temperature growth of single-crystalline GaN on ScAlMgO4 substrates by metalorganic chemical vapor deposition

GaN growth on ScAlMgO4 substrates via thermally-dewetted thin Al films

Thin-Wall GaN/InAlN Multiple Quantum Well Tubes

Optical properties of nearly lattice-matched GaN/(Al,In)N quantum wells

Self-formation of hexagonal nanotemplates for growth of pyramidal quantum dots by metalorganic vapor phase epitaxy on patterned substrates

Optimization of NH₃-MBE grown p-doped (Al)GaN layers and their implementation in long wavelength laser diodes and tunnel junctions

Advantages and remaining issues of state-of-the-art m-plane freestanding GaN substrates grown by halide vapor phase epitaxy for m-plane InGaN epitaxial growth

Investigation of the In composition in InGaN/GaN quantum wells deposited by MOVPE and/or MBE with emission from violet to green

Optics, morphology, and growth kinetics of GaAs/Al_{x}Ga_{1-x}As quantum wells grown on vicinal substrates by metalorganic vapor phase epitaxy