Monolithic integration of III-V microcavity LEDs on silicon drivers using conformal epitaxy
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Electrification of the energy section, from generation to end-use, plays an essential role in reducing global CO2 emission. Innovations in power electronics are required to increase conversion efficiency and power density. Gallium nitride (GaN) transistors ...
Gallium Nitride (GaN) is a wonder material which has widely transformed the world by enabling
energy-efficient white light-emitting diodes. Over the past decade, GaN has also emerged as one
of the most promising materials for developing power devices which ...
Recently, microresonator-based dissipative Kerr soliton frequency combs ("soliton microcomb") have emerged as miniaturized optical frequency combs. So far, soliton microcombs have been realized in many CMOS-compatible material platforms including silico ...
Microresonators are fundamental building blocks of any photonic integrated circuit, as they can be used as filters, modulators, sensors, and to enhance light emission. If these resonators are suspended and are free to oscillate, we can exploit the interact ...
Wireless optoelectronic devices are fabricated by controlling the porosity of p-type silicon, enabling in vivo efficient, non-genetic optoelectronic modulation of peripheral nerve activity. ...
The present invention concerns a bodily implantable or probe device and microelectrode fabrication method comprising providing at least one silicon substrate including an electronic device or unit; providing, on a first side of the silicon substrate, at le ...
In recent years, the automotive industry has aspired to bring self-driving vehicles to the generalpublic and light detection and ranging (LiDAR) sensors have emerged as the preferred solution forcar vision systems. At present, LiDAR technologies employ exp ...
In this work, we demonstrate that GaN can be directly grown at high temperature on Si(111) substrates by metalorganic CVD without using any intentional AlN buffer, by simply employing a trimethylaluminum (TMAl) preflow. We found that n-GaN layers directly ...
Broadband electrostatic force microscopy can be used to non-destructively image n-type and p-type dopant layers in silicon devices with a lateral resolution of 10 nm and a vertical resolution of 0.5 nm. Integrated circuits and certain silicon-based quantum ...
A method for manufacturing glass-based micro- and nanostructure comprising the step of dewetting a thin-film glass layer on a textured substrate to form the micro- and nanostructure from the thin-film glass layer. ...