GaN and InGaN quantum dots grown by MBE: from UV to red light emission
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We have studied the properties of Mg-doped GaN epilayers grown by molecular beam epitaxy (MBE) with ammonia as nitrogen source. GaN p-n homojunctions has been developed to determine the optoelectronic characteristics of the junctions as a function of the p ...
Quantum dots (QDs) have a potential for application in semiconductor optical amplifiers (SOAs), due to their high saturation power related to the low differential gain, fast gain recovery and wide gain spectrum compared to quantum wells. Besides all advant ...
Microphotoluminescence (mu-PL) experiment has been performed on a structure with InGaAs/GaAs epitaxial quantum rods (quantum dots with the aspect ratio as high as 4.1) grown by depositing short-period InAs/GaAs superlattice by molecular beam epitaxy on GaA ...
Gallium Nitride (GaN) and its ternary alloys with aluminium and indium have met a growing interest in the last decade. These semiconductors have a large direct bandgap and can be doped with either silicon (Si) for n-type and magnesium (Mg) for p-type layer ...
Silicon oxide films containing CdS quantum dots have been deposited on glass substrates by a sol–gel dip-coating process. Hereby the CdS nanocrystals are grown during the thermal annealing step following the dip-coating procedure. Total hemispherical trans ...
A quantum dot is a semiconductor nanostructure that confines the motion of conduction band electrons and valence band holes in all three spatial directions, thus creating fully discrete energy levels. The confinement in the InAs/GaAs material system is gen ...
Self-assembled quantum-dots (QDs) represent a distributed ensemble of zero dimensional structures with a near-singular density of states. Implemented as the active medium in a diode laser their unique properties lead to improved and often novel characteris ...
We present results on the polarization-resolved photoluminescence emitted from InGaAs/AlGaAs single quantum dots (QDs) grown in inverted tetrahedral pyramids. The emitted light was detected for two mutually perpendicular linear polarization directions in t ...
We have compared the In distribution in InGaN quantum wells grown by molecular beam epitaxy (MBE) and metalorganic vapor phase epitaxy (MOVPE). The samples were studied by conventional and high-resolution transmission electron microscopy (HRTEM). The local ...
General properties of III-V nitride-based quantum dots (QDs) are presented, with a special emphasis on InGaN/GaN QDs for visible optoelectronic devices. Stranski-Krastanov GaN/AIN dots are first discussed as a prototypical system. it is shown that the opti ...