Epitaxial (001) Ge on Crystalline Oxide Grown on (001) Si
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Gallium Nitride (GaN) is a wonder material which has widely transformed the world by enabling
energy-efficient white light-emitting diodes. Over the past decade, GaN has also emerged as one
of the most promising materials for developing power devices which ...
In recent years, the automotive industry has aspired to bring self-driving vehicles to the generalpublic and light detection and ranging (LiDAR) sensors have emerged as the preferred solution forcar vision systems. At present, LiDAR technologies employ exp ...
This work presents a systematic analysis of the transport mechanism and surface passivation of tunneling oxide (SiO2)/p-type poly-silicon (poly-Si(p)) junctions applied to p-type crystalline silicon (c-Si) solar cells by means of TCAD numerical simulations ...
Today more than 90% of the global PV market is covered by c-Si solar cells which are limited by recombination losses at the metal-semiconductor interface. This recombination path can be avoided by separating the metal from the c-Si wafer by introducing a b ...
EPFL2018
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A method for manufacturing vias in a silicon wafer, the silicon wafer having a crystal orientation, and having a plane that is perpendicular to a surface of the wafer, tilted by 35.26°, the method comprising the steps of providing a mask having ...
2021
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Intrinsic amorphous silicon provides excellent surface passivation on crystalline silicon. It has previously been shown, that carriers that are photo generated in the amorphous silicon can be efficiently electronically injected into the crystalline silicon ...
IEEE2018
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Intrinsic amorphous silicon provides excellent surface passivation on crystalline silicon. It has previously been shown, that carriers that are photo generated in the amorphous silicon can be efficiently electronically injected into the crystalline silicon ...
ELSEVIER SCIENCE BV2018
In this thesis, we present the development and characterization of novel approaches to carrier-selective passivating contacts for crystalline silicon (c-Si) solar cells. In our first approach, we benefit from a wide-bandgap material, namely mixed-phase sil ...
EPFL2018
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Silicon heterojunction (SHJ) solar cells have reached record efficiency, particularly in all-back-contacted architectures. Despite this, two-side contacted SHJ cells still suffer from parasitic absorption and series resistance losses in the amorphous silic ...
We report the first demonstration of fully-vertical power MOSFETs on 6.6-μm-thick GaN grown on a 6-inch Si substrate by metal-organic chemical vapor deposition (MOCVD). A robust fabrication method was developed based on a selective and local removal of the ...
