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In digital electronics, a NAND gate (NOT-AND) is a logic gate which produces an output which is false only if all its inputs are true; thus its output is complement to that of an AND gate. A LOW (0) output results only if all the inputs to the gate are HIGH (1); if any input is LOW (0), a HIGH (1) output results. A NAND gate is made using transistors and junction diodes. By De Morgan's laws, a two-input NAND gate's logic may be expressed as =+, making a NAND gate equivalent to inverters followed by an OR gate. The NAND gate is significant because any boolean function can be implemented by using a combination of NAND gates. This property is called functional completeness. It shares this property with the NOR gate. Digital systems employing certain logic circuits take advantage of NAND's functional completeness. NAND gates with two or more inputs are available as integrated circuits in transistor-transistor logic, CMOS, and other logic families. Logic The function

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Binary logic gates are building blocks of computing machines, in particular, electronic computers. One variant is the programable logic gate, also known as the reconfigurable logic gate, in which the logical function implemented can be modified. In this paper, we construct a mechanism to implement a reconfigurable logic gate. This mechanism is based on the concept of programable multistable mechanisms which we introduced in previous work. The application of a programable multistable mechanism is superior to the different bistable mechanisms previously used to implement logic gates since a single mechanism can be used to implement several logic functions. Our reconfigurable logic gates use a novel geometric construction where the geometric data depend on the stability behavior of the mechanism. There are 16 binary logic gates and our construction can theoretically produce nine of these and our physical model produces six logical gates. Input and output of the mechanism are displacement and the mechanisms can be combined serially, i.e., output of a mechanism is an input for another. We show that we can implement NOR and NAND gates, so combinations of our mechanism can express any logical function. The mechanism is therefore theoretically universal, i.e., implement any computation. We give an analytic model of the mechanism based on Euler-Bernoulli beam theory to find the geometric data, then validate it using finite element analysis and experimental demonstration.

ASME2020

A low-power micromachined MOSFET gas sensor

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This paper reports on the design, fabrication, and characterization of the first low-power consumption MOSFET gas sensor. The novel MOSFET array gas sensor has been fabricated using anisotropic bulk silicon micromachining. A heating resistor, a diode used as temperature sensor, and four MOSFETs are located in a silicon island suspended by a dielectric membrane. The membrane has a low thermal conductivity coefficient and, therefore, thermally isolates the electronic components from the chip frame. This low thermal mass device allows the reduction of the power consumption to a value of 90 mW for an array of four MOSFETs at an operating temperature of 170 °C. Three of the MOSFETs have their gate covered with thin catalytic metals and are used as gas sensors. The fourth one has a standard gate covered with nitride and could act as a reference. The sensor was tested under different gaseous atmospheres and has shown good gas sensitivities to hydrogen and ammonia. The low-power MOSFET array gas sensor presented is suitable for applications in portable gas sensor instruments, electronic noses, and automobiles.

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