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Proposal and Performance Analysis of Normally Off n(++) GaN/InAlN/AlN/GaN HEMTs With 1-nm-Thick InAlN Barrier

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Proposal and Performance Analysis of Normally Off n(++) GaN/InAlN/AlN/GaN HEMTs With 1-nm-Thick InAlN Barrier

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Current status of AlInN layers lattice-matched to GaN for photonics and electronics

InAIN/GaN HEMTs: A first insight into technological optimization

On the lateral decomposition, growth mode and defect nucleation in the InxGa1-xAs channel of HEMT devices depending on the growth temperature, well thickness and mismatch

Well surface roughness and fault density effects on the Hall mobility of In[sub x]Ga[sub 1−x]As/In[sub y]Al[sub 1−y]As/InP high electron mobility transistors

Correlation of electrical anisotropies of HEMT devices with defect distribution and InGaAs well roughness

Cyclotron resonance in asymmetric modulation-doped field-effect transistor heterostructures using In[sub x]Ga[sub 1−x]As quantum well and InAs–GaAs superlattice channels

Photorécepteurs 1,3-1,55 µm obtenus par intégration monolithique de photodiodes p-i-n et de transistors HEMT

Low-Frequency Noise Measurements of Alxga1-Xas/Inyga1-Y as/Gaas High-Electron-Mobility Transistors

High-voltage Normally-off Recessed tri-gate GaN Power MOSFETs with Low On-resistance