Publication

Fabrication and formation of Ta/Pt-Si ohmic contacts applied to high-temperature Through Silicon Vias (TSVs)

Related publications (41)

Towards Scalable Electronics: Synthetic 2D Materials for Large-Area 2D Circuit Integration

In the past decades, a significant increase of the transistor density on a chip has led to exponential growth in computational power driven by Moore's law. To overcome the bottleneck of traditional von-Neumann architecture in computational efficiency, effo ...

EPFL2024

New Technologies to Enhance the Figures-of-Merit of GaN Power Devices

Luca Nela

Gallium Nitride (GaN) has enabled groundbreaking developments in the field of optoelectronics and radio frequency communication. More recently, GaN devices for power conversion applications have demonstrated excellent potential. Thanks to Gallium Nitride w ...

EPFL2022

Quasi-vertical GaN-on-Si reverse blocking power MOSFETs

Elison de Nazareth Matioli, Alessandro Floriduz, Riyaz Mohammed Abdul Khadar, Chao Liu

We demonstrate quasi-vertical reverse blocking (RB) MOSFETs on 6.7 mu m thick GaN grown on a 6 inch Si substrate by metalorganic chemical vapor deposition. The RB capability was achieved by replacing the ohmic drain with a quasi-vertical Schottky drain, re ...

IOP PUBLISHING LTD2021

GaN vertical power devices on silicon substrates

Riyaz Mohammed Abdul Khadar

Gallium Nitride (GaN) is a wonder material which has widely transformed the world by enabling energy-efficient white light-emitting diodes. Over the past decade, GaN has also emerged as one of the most promising materials for developing power devices which ...

EPFL2021

The Michelangelo step: removing scalloping and tapering effects in high aspect ratio through silicon vias

Edoardo Charbon, Sandro Carrara, Simone Frasca, Rebecca Camilla Leghziel

We present here, for the first time, a fabrication technique that allows manufacturing scallop free, non-tapered, high aspect ratio in through-silicon vias (TSVs) on silicon wafers. TSVs are among major technology players in modern high-volume manufacturin ...

2021

Polarity-Controllable Devices and Circuits for Doping-Free 2D Electronics

Giovanni Vincenzo Resta

The growth of information technology has been sustained by the miniaturization of Complementary Metal-Oxide-Semiconductor (CMOS) Field-Effect Transistors (FETs), with the number of devices per unit area constantly increasing, as exemplified by Mooreâs la ...

EPFL2019

First Near-Ultraviolet- and Blue-Enhanced Backside-Illuminated Single-Photon Avalanche Diode Based on Standard SOI CMOS Technology

Edoardo Charbon, Claudio Bruschini, Myung Jae Lee

We present the world's first backside-illuminated (BSI) single-photon avalanche diode (SPAD) based on standard silicon-on-insulator (SOI) complementary metal-oxide semiconductor (CMOS) technology. This SPAD achieves a good dark count rate (DCR) after backs ...

2019

Through Silicon Vias With Invar Metal Conductor for High-Temperature Applications

Mikhail Asiatici, Göran Stemme

Through silicon vias (TSVs) are key enablers of 3-D integration technologies which, by vertically stacking and interconnecting multiple chips, achieve higher performances, lower power, and a smaller footprint. Copper is the most commonly used conductor to ...

Institute of Electrical and Electronics Engineers2017

Contact resistance effects in organic n-channel thin-film transistors

Reinhold Rödel

Organic thin-film transistors (TFTs) have undergone tremendous progress in the past few years. Their great potential in terms of mechanical flexibility, light weight, low-cost and large-area fabrication makes them promising candidates for novel electronic ...

EPFL2016

Suspended micro-resonator fabrication: fusion bonding of Silicon Nitride interfaces

Annalisa De Pastina, Pierre-Emmanuel Marie Thiriet

This project aims to prove of the feasibility of Silicon Fusion Bonding for fabrication of micro- capillaries for gas cooling down. An optimal recipe for Silicon Fusion Bonding is developed, consisting of four steps: RCA cleaning, surface activation with O ...

2016

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