Publications related to Growth of graded doped Si/SiGe Heterostructure Tunnel FET

Doping Engineering for PDP Optimization in SPADs Implemented in 55-nm BCD Process

Edoardo Charbon, Claudio Bruschini, Myung Jae Lee, Feng Liu

We introduce a new family of single-photon avalanche diodes (SPADs) with enhanced depletion regions in a 55-nm Bipolar-CMOS-DMOS (BCD) technology. We demonstrate how to systematically engineer doping profiles in the main junction and in deep p-well layers ...

Piscataway2024

Multigraded algebras and multigraded linear series

Leonid Monin, Fatemeh Mohammadi, Yairon Cid Ruiz

This paper is devoted to the study of multigraded algebras and multigraded linear series. For an Ns

\mathbb {N}s

-graded algebra A

A

, we define and study its volume function FA:N+s -> R

F_A:\mathbb {N}_+s\rightarrow \mathbb {R}

, which computes the ...

Wiley2024

Surfactant behavior and limited incorporation of indium during in situ doping of GeSn grown by molecular beam epitaxy

Anna Fontcuberta i Morral, Andrea Giunto, Thomas Hagger, Louise Emma Webb

GeSn is a promising group-IV semiconductor material for on-chip Si photonics devices and high-mobility transistors. These devices require the use of doped GeSn regions, achieved preferably in situ during epitaxy. From the electronic valence point of view, ...

AMER PHYSICAL SOC2023

GLOBALLY plus -REGULAR VARIETIES AND THE MINIMAL MODEL PROGRAM FOR THREEFOLDS IN MIXED CHARACTERISTIC

Zsolt Patakfalvi, Joseph Allen Waldron

We establish the Minimal Model Program for arithmetic threefolds whose residue characteristics are greater than five. In doing this, we generalize the theory of global F-regularity to mixed characteristic and identify certain stable sections of adjoint lin ...

SPRINGER HEIDELBERG2023

Light-Responsive Oligothiophenes Incorporating Photochromic Torsional Switches

Kevin Sivula, Emilie Baudat, Giuseppe Sforazzini, Augustina Jozeliunaite

We present a quaterthiophene and sexithiophene that can reversibly change their effective pi-conjugation length through photoexcitation. The reported compounds make use of light-responsive molecular actuators consisting of an azobenzene attached to a bithi ...

WILEY-V C H VERLAG GMBH2022

Aptamer-field-effect transistors for small-molecule sensing in complex environments

Nako Nakatsuka

Aptamer-functionalized field-effect transistor (FET) biosensors enable detection of small-molecule targets in complex environments such as tissue and blood. Conventional FET-based platforms suffer from Debye screening in high ionic strength physiological e ...

Humana2022

A hybrid III-V tunnel FET and MOSFET technology platform integrated on silicon

Mihai Adrian Ionescu, Kirsten Emilie Moselund, Clarissa Convertino

InGaAs/GaAsSb tunnelling field-effect transistors and InGaAs metal-oxide-semiconductor field-effect transistors can be integrated on the same silicon substrate using conventional CMOS-compatible processes, creating a platform for potential use in low-power ...

NATURE RESEARCH2021

Resonances on GaN-on-Si Epitaxies: A Source of Output Capacitance Losses in Power HEMTs

Elison de Nazareth Matioli, Armin Jafari, Riyaz Mohammed Abdul Khadar, Minghua Zhu

GaN-on-Si high-electron-mobility transistors (HEMTs) exhibit excellent properties for efficient power conversion. Nevertheless, a considerable energy loss associated with the charging and discharging of the output capacitance (COSS) in these transistors se ...

2021

Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects

Mihai Adrian Ionescu, Igor Stolichnov, Ali Saeidi, Teodor Rosca, Matteo Cavalieri

Nanowire tunnel field-effect transistors (TFETs) have been proposed as the most advanced one-dimensional (1D) devices that break the thermionic 60 mV/decade of the subthreshold swing (SS) of metal oxide semiconductor field-effect transistors (MOSFETs) by u ...

AMER CHEMICAL SOC2020

High-Performance III-V MOSFETs and Tunnel-FETs Integrated on Silicon

Clarissa Convertino

Silicon transistor scaling is approaching its end and a transition to novel materials and device concepts is more than ever essential. High-mobility compound semiconductors are considered promising candidates to replace silicon, targeting low-power logic a ...

EPFL2020

Growth of graded doped Si/SiGe Heterostructure Tunnel FET

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Doping Engineering for PDP Optimization in SPADs Implemented in 55-nm BCD Process

Multigraded algebras and multigraded linear series

Surfactant behavior and limited incorporation of indium during in situ doping of GeSn grown by molecular beam epitaxy

GLOBALLY plus -REGULAR VARIETIES AND THE MINIMAL MODEL PROGRAM FOR THREEFOLDS IN MIXED CHARACTERISTIC

Light-Responsive Oligothiophenes Incorporating Photochromic Torsional Switches

Aptamer-field-effect transistors for small-molecule sensing in complex environments

A hybrid III-V tunnel FET and MOSFET technology platform integrated on silicon

Resonances on GaN-on-Si Epitaxies: A Source of Output Capacitance Losses in Power HEMTs

Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects

High-Performance III-V MOSFETs and Tunnel-FETs Integrated on Silicon

Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects

GLOBALLY plus -REGULAR VARIETIES AND THE MINIMAL MODEL PROGRAM FOR THREEFOLDS IN MIXED CHARACTERISTIC

Aptamer-field-effect transistors for small-molecule sensing in complex environments

Multigraded algebras and multigraded linear series

A hybrid III-V tunnel FET and MOSFET technology platform integrated on silicon

High-Performance III-V MOSFETs and Tunnel-FETs Integrated on Silicon

Resonances on GaN-on-Si Epitaxies: A Source of Output Capacitance Losses in Power HEMTs

Surfactant behavior and limited incorporation of indium during in situ doping of GeSn grown by molecular beam epitaxy

Light-Responsive Oligothiophenes Incorporating Photochromic Torsional Switches

Doping Engineering for PDP Optimization in SPADs Implemented in 55-nm BCD Process