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This work reports on thermally isolated electronic components for gas sensing applications. The device is composed of an array of 4 MOSFET, a diode and a semiconductor resistor integrated on a micro-hotplate, which is fabricated using bulk micromachining o ...
Reliable split C(V) measurements are shown to be feasible on ultra-thin oxides (down to 1.2 nm) by using relatively small area MOSFETs (typically 100 mum(2)). To this end, specific correction procedures for parasitic parallel capacitances and gate leakage ...
Accurate modeling and efficient parameter extraction of a small signal equivalent circuit of MOS transistors for high-frequency operation are presented. The small-signal equivalent circuit is based on the quasi-static approximation which was found to be ad ...
Using the tip of an atomic force microscope, we have manipulated individual carbon nanotubes on a patterned substrate, and have fabricated model nanodevices, including a room temperature field-effect transistor with a channel only 1.6 nm wide, as well as s ...
We studied the photo-Hall mobility and the photo-Hall density of modulation-doped field-effect transistor structures using either an InGaAs alloy channel or a short-period superlattice channel. In defining the short-period superlattice channel we changed t ...
A novel MEMS device architecture: the SOI SG-MOSFET, which combines a solid- state MOS transistor and a suspended metal membrane in a unique metal-over- gate architecture, is proposed. A unified physical analytical model (weak, moderate and strong inversio ...
Using the epitaxy-on electronics (EoE) process, self-electrooptic effect devices (SEED's) have been monolithically integrated with VLSI GaAs electronics., The EoE approach provides both depletion-mode and enhancement-mode MESFET's for large-scale, high-den ...
In this paper, we report on the properties of GaN films and AlGaN/GaN HEMT structures grown by molecular beam epitaxy on resistive Si(1 1 1) substrates. The properties of the GaN buffer layer and the AlGaN/GaN HEMTs are presented. Finally, both static and ...
In this article an integrated force sensor based on a stress-sensing MOS transistor is introduced for applications in scanning force microscopy (SFM) . The sensor configuration will be described, and theoretical and experimental investigations of the sensi ...
Using the atomic force microscope (AFM), we have fabricated a metal oxide semiconductor field-effect transistor (MOSFET) on silicon with an effective channel length of 0.1 um. The lithography at the gate level was performed with the scanning tip of the AFM ...
