Effects of surface oxide formation on germanium nanowire band-edge photoluminescence
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Molecular beam epitaxy Ga-assisted synthesis of GaAs nanowires is demonstrated. The nucleation and growth are seen to be related to the presence of a SiO2 layer previously deposited on the GaAs wafer. The interaction of the reactive gallium with the SiO2 p ...
Tobacco Mosaic Virus (TMV) is composed of 2130 identical coat protein subunits following the right-handed helix of an accompanying RNA strand to produce a 300 nm hollow cylinder with an outer diameter of 18 nm and a 4 nm wide central channel. In this work, ...
Spray pyrolysis has been widely used for the prepn. of thin (.apprx.0.1 mm) and transparent SnO2 films on glass substrates. The parameters of the spray pyrolysis for the prepn. of thick SnO2-Sb2O5 conductive films on Ti substrates were studied for electroc ...
Platinum silicide films are widely used in silicon devices for ohmic and Schottky contacts. It has been demonstrated in the recent years that Schottky barriers employing ultra-thin platinum silicide films (thickness < 10 nm) are useful for photodetection i ...
By means of Raman and photoluminescence measurements we have studied the effect of strain and confinement on the optical phonon spectrum of single InAs quantum wells. The frequency region of longitudinal optical phonons confined in both the InAs well and I ...
The dramatic enhancement of the silicon room-temperature oxidation rate by a Na overlayer has been attributed to the spectator catalytic action of the alkali metal. In contrast, we show evidence that Na participates in the oxidation process binding an oxyg ...
The oxide film present along the interface between metal and pores in microcellular aluminium produced by replication depends on the leaching medium that is used to dissolve the NaCl preform: leaching in water produces a thick and irregular multilayered hy ...
A set of parameters for the temperature dependence of the direct band gap of InP has been determined by fitting the excitonic recombination energy in the photoluminescence (PL) spectra between 2 and 250 K. We have used high-quality InP samples grown by che ...