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Semiconductor materials have given rise to today's digital technology and consumer electronics. Widespread adoption is closely linked to the ability to process and integrate them in devices at scale. Where flexibility and large surfaces are required, such ...
Silicon transistor scaling is approaching its end and a transition to novel materials and device concepts is more than ever essential. High-mobility compound semiconductors are considered promising candidates to replace silicon, targeting low-power logic a ...
Solution processing is an attractive alternative to standard vacuum fabrication techniques for the large-area manufacturing of metal oxide (MOx)-based electron devices. Here, we report on thin-film transistors (TFTs) based on a solution-processed indium zi ...
The present invention relates to a Semiconductor device including a first electrode, a second electrode and at least one semiconductor material or layer between the first and second electrode. The semiconductor device further includes at least one field pl ...
Over the past 20 years, nanomaterials, such as quantum dots, nanoparticles, nanowires(NWs), nanotubes, and graphene, have received enormous attention due to their suitable properties for designing novel nanoscale biosensors. Nanomaterials are very small st ...
Elsevier2018
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The present invention relates, for example, to a semiconductor structure containing multiple parallel channels in which several parallel conductive channels are formed within the semiconductor structure. Electric contact or electrostatic control over all t ...
2018
Two-dimensional (2D) materials have received tremendous research attention recently, as they possess peculiar physical properties in their monolayer and few-layer forms, which further lead to novel applications. A wide range of 2D materials covers insulato ...
EPFL2018
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Super junctions (SJs) have enabled unprecedented performance in Silicon power devices, which could be further improved by applying this concept to wide bandgap semiconductors like gallium nitride (GaN). Currently, polarization super junctions (PSJs) are th ...
2022
The growth of information technology has been sustained by the miniaturization of Complementary Metal-Oxide-Semiconductor (CMOS) Field-Effect Transistors (FETs), with the number of devices per unit area constantly increasing, as exemplified by Mooreâs la ...
EPFL2019
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This letter reports a temperature-dependent limit for the subthreshold swing in MOSFETs that deviates from the Boltzmann limit at deep-cryogenic temperatures. Below a critical temperature, the derived limit saturates to a value that is independent of tempe ...
