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Single field effect transistor capacitor-less memory device and method of operating the same

Related publications (51)

Exploration of Negative Capacitance Devices and Technologies

Conventional device scaling has been the main guiding principle of the MOS device engineering over these past years. However, this aggressive scaling would be eventually limited due to the inability to remove the heat generated by MOSFET devices. The power ...

EPFL2019

On the Dynamic Performance of Laterally Gated Transistors

Elison de Nazareth Matioli, Armin Jafari, Catherine Erine, Giovanni Santoruvo

Laterally gated transistors have been proposed as an innovative device architecture in which a semiconducting channel is controlled by side gates. In this sense, the gate can either be in contact with the sidewalls or be separated by a gap. In the latter c ...

2019

Polarity-Controllable Devices and Circuits for Doping-Free 2D Electronics

Giovanni Vincenzo Resta

The growth of information technology has been sustained by the miniaturization of Complementary Metal-Oxide-Semiconductor (CMOS) Field-Effect Transistors (FETs), with the number of devices per unit area constantly increasing, as exemplified by Mooreâs la ...

EPFL2019

Detection of ultra-low protein concentrations with the simplest possible field effect transistor

Mihai Adrian Ionescu, Elizabeth Buitrago Godinez

Silicon nanowire (Si NW) sensors have attracted great attention due to their ability to provide fast, low-cost, label-free, real-time detection of chemical and biological species. Usually configured as field effect transistors (FETs), they have already dem ...

IOP PUBLISHING LTD2019

Field-effect transistor device or sensor for sensing ions, molecules or biomarkers in a fluid

Mihai Adrian Ionescu, Junrui Zhang, Francesco Bellando

The present disclosure concerns a Field-Effect Transistor device or sensor comprising at least one drain region, at least one source region, at least a channel region, at least a first gate connected to the channel region, at least one stack comprising at ...

2019

Functionality Enhanced Memories for Edge-AI Embedded Systems

David Atienza Alonso, Alexandre Sébastien Julien Levisse, Pierre-Emmanuel Julien Marc Gaillardon, Marco Antonio Rios, William Andrew Simon

With the surge in complexity of edge workloads, it appeared in the scientific community that such workloads cannot be anymore overflown to the cloud due to the huge edge device to server communication energy cost and the high energy consumption induced in ...

IEEE2019

The Cryogenic Temperature Behavior of Bipolar, MOS, and DTMOS Transistors in Standard CMOS

Edoardo Charbon, Harald Arjan Robert Homulle, Fabio Sebastiano

Both CMOS bandgap voltage references and temperature sensors rely on the temperature behavior of either CMOS substrate BJTs or MOS transistors in weak inversion. Bipolar transistors are generally preferred over MOS transistors because of their lower spread ...

2018

Resistive random access memory based multiplexers and field programmable gate arrays

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Xifan Tang, Gain Kim, Edouard Giacomin

Resistive random access memory (RRAM) based multiplexers and field programmable gate arrays (FPGAs) are provided. The RRAM-based multiplexers and FPGAs include a 4T1R programming structure to program the RRAMs. The programming structure includes two progra ...

2018

Emerging Technologies for Computing

Giovanni De Micheli

The evolution of computing has lead to very different realizations to cope with performance and energy consumption density, two competing factors that are not obvious to reconcile. The current semiconductor technologies, mainly FinFETs and FDSoI, provide u ...

2017

Differentiating Siblings: The Case of Dopamine and Norepinephrine

Nako Nakatsuka

Monitoring dopamine and norepinephrine (or other structurally similar neurotransmitters) in the same brain region necessitates selective sensing. In this Viewpoint, we highlight electrochemical and optical strategies for advancing simultaneous real-time me ...

2017

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