Publication

Radiation-Induced Charge Trapping in Shallow Trench Isolations of FinFETs

Federico Faccio
2024
Journal paper
Abstract

We provide comprehensive experimental data and technology computer-aided design (TCAD) simulations to clarify total-ionizing-dose mechanisms in 16-nm Si FinFETs. In n-channel FinFETs irradiated to ultrahigh doses, the transconductance evolution rebounds (increase up to 3-10 Mrad followed by a decrease), while the drain-to-source leakage current steadily augments until reaching a plateau at very large doses. These effects result from positive charge trapping deep in the sidewalls of the shallow trench isolation (STI) and negative trapped charge accumulation localized in the upper STI corners. Larger sizes of inter-fin STI enhance the leakage current degradation of transistors with smaller numbers of fins. Hydrogen-induced border- and/or interface-trap generation at the Si/oxide interface at the STI corners leads to increased low-frequency noise (LFN) at doses >10>{10} Mrad(SiO2). These results show that the quality of oxides and interfaces in the upper region of the STI adjacent to the device channel is crucial for the tolerance to ultrahigh radiation of modern FinFET technologies.

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MOSFET
The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET.
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A multigate device, multi-gate MOSFET or multi-gate field-effect transistor (MuGFET) refers to a metal–oxide–semiconductor field-effect transistor (MOSFET) that has more than one gate on a single transistor. The multiple gates may be controlled by a single gate electrode, wherein the multiple gate surfaces act electrically as a single gate, or by independent gate electrodes. A multigate device employing independent gate electrodes is sometimes called a multiple-independent-gate field-effect transistor (MIGFET).
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