Semiconductor device fabricationSemiconductor device fabrication is the process used to manufacture semiconductor devices, typically integrated circuits (ICs) such as computer processors, microcontrollers, and memory chips (such as NAND flash and DRAM) that are present in everyday electrical and electronic devices. It is a multiple-step photolithographic and physio-chemical process (with steps such as thermal oxidation, thin-film deposition, ion-implantation, etching) during which electronic circuits are gradually created on a wafer, typically made of pure single-crystal semiconducting material.
MEMSMEMS (Microelectromechanical systems) is the technology of microscopic devices incorporating both electronic and moving parts. MEMS are made up of components between 1 and 100 micrometres in size (i.e., 0.001 to 0.1 mm), and MEMS devices generally range in size from 20 micrometres to a millimetre (i.e., 0.02 to 1.0 mm), although components arranged in arrays (e.g., digital micromirror devices) can be more than 1000 mm2.
Connection formIn mathematics, and specifically differential geometry, a connection form is a manner of organizing the data of a connection using the language of moving frames and differential forms. Historically, connection forms were introduced by Élie Cartan in the first half of the 20th century as part of, and one of the principal motivations for, his method of moving frames. The connection form generally depends on a choice of a coordinate frame, and so is not a tensorial object.
Etching (microfabrication)Etching is used in microfabrication to chemically remove layers from the surface of a wafer during manufacturing. Etching is a critically important process module, and every wafer undergoes many etching steps before it is complete. For many etch steps, part of the wafer is protected from the etchant by a "masking" material which resists etching. In some cases, the masking material is a photoresist which has been patterned using photolithography. Other situations require a more durable mask, such as silicon nitride.
Connection (principal bundle)In mathematics, and especially differential geometry and gauge theory, a connection is a device that defines a notion of parallel transport on the bundle; that is, a way to "connect" or identify fibers over nearby points. A principal G-connection on a principal G-bundle P over a smooth manifold M is a particular type of connection which is compatible with the action of the group G. A principal connection can be viewed as a special case of the notion of an Ehresmann connection, and is sometimes called a principal Ehresmann connection.
Connection (mathematics)In geometry, the notion of a connection makes precise the idea of transporting local geometric objects, such as tangent vectors or tensors in the tangent space, along a curve or family of curves in a parallel and consistent manner. There are various kinds of connections in modern geometry, depending on what sort of data one wants to transport. For instance, an affine connection, the most elementary type of connection, gives a means for parallel transport of tangent vectors on a manifold from one point to another along a curve.
Connection (vector bundle)In mathematics, and especially differential geometry and gauge theory, a connection on a fiber bundle is a device that defines a notion of parallel transport on the bundle; that is, a way to "connect" or identify fibers over nearby points. The most common case is that of a linear connection on a vector bundle, for which the notion of parallel transport must be linear. A linear connection is equivalently specified by a covariant derivative, an operator that differentiates sections of the bundle along tangent directions in the base manifold, in such a way that parallel sections have derivative zero.
Three-dimensional integrated circuitA three-dimensional integrated circuit (3D IC) is a MOS (metal-oxide semiconductor) integrated circuit (IC) manufactured by stacking as many as 16 or more ICs and interconnecting them vertically using, for instance, through-silicon vias (TSVs) or Cu-Cu connections, so that they behave as a single device to achieve performance improvements at reduced power and smaller footprint than conventional two dimensional processes. The 3D IC is one of several 3D integration schemes that exploit the z-direction to achieve electrical performance benefits in microelectronics and nanoelectronics.
Levi-Civita connectionIn Riemannian or pseudo-Riemannian geometry (in particular the Lorentzian geometry of general relativity), the Levi-Civita connection is the unique affine connection on the tangent bundle of a manifold (i.e. affine connection) that preserves the (pseudo-)Riemannian metric and is torsion-free. The fundamental theorem of Riemannian geometry states that there is a unique connection which satisfies these properties. In the theory of Riemannian and pseudo-Riemannian manifolds the term covariant derivative is often used for the Levi-Civita connection.
Reactive-ion etchingReactive-ion etching (RIE) is an etching technology used in microfabrication. RIE is a type of dry etching which has different characteristics than wet etching. RIE uses chemically reactive plasma to remove material deposited on wafers. The plasma is generated under low pressure (vacuum) by an electromagnetic field. High-energy ions from the plasma attack the wafer surface and react with it. A typical (parallel plate) RIE system consists of a cylindrical vacuum chamber, with a wafer platter situated in the bottom portion of the chamber.
