Free standing and solidly mounted Lamb wave resonators based on Al0.85Sc0.15N thin film
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Institute of Physics2010
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This paper reports the low power operation of Vibrating Body Field Effect Transistors as active resonators for communication applications. For the first time we report active resonators operating at 2MHz and 20MHz with power consumption less than 100μW and ...
Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2009
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Photonic crystal point-defect cavities were fabricated in a GaN free-standing photonic crystal slab. The cavities are based on the popular L3 design, which was optimized using an automated process based on a genetic algorithm, in order to maximize the qual ...
American Institute of Physics2014
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This work reports on irradiations made on silicon bulk-acoustic wave resonators. The resonators were based on a tuning fork geometry and actuated by a piezoelectric aluminum nitride layer. They had a resonance frequency of 150 kHz and a quality factor of a ...
2014
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Triple layer SiO2/AlN/SiO2 composite thin film bulk acoustic wave resonators (TFBARs) were studied for applications in atomic clocks. The TFBAR's were tuned to 3.4 GHz, corresponding to half the hyperfine splitting of the ground state of rubidium Rb-87 ato ...
American Institute of Physics2011
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AlN films are employed in RF filters for wireless communication. We report on enhanced coupling factors k(t)(2) obtained by partial substitution of Al by Sc. Al0.88Sc0.12N films were deposited by reactive magnetron sputtering from an Al0.9Sc0.1 alloy targe ...
2011
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A closed-loop oscillator topology is proposed for dynamic sensor operation of nanoelectromechanical systems, benefiting from the structure's quality factor. Automatic adaptation to diverse sensors' properties is achieved via a self-regulating phase-locked ...
The development of wireless and mobile communication in the last decade led to the elaboration of new components based on thin films with continually increasing performance and reduced fabrication cost. A fundamental element for mobile communication is the ...
This paper presents, for the first time, experimental evidence on resonant-body Fin-FETs (RB-FinFET) with two independent lateral gates, operated from weak to strong inversion, which enables unique trade-off between power consumption and gain. Resonance fr ...
Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2010
Radio frequency (RF) filters based on bulk acoustic wave resonances in piezoelectric thin films have become indispensable components in mobile communications. The currently used material, AlN, exhibits many excellent properties for this purpose. However, i ...
