Publication

Enhanced Electron-Phonon Interaction in Multivalley Materials

Related publications (123)

Electron Stability and Negative-Tetron Luminescence in Free-Standing Colloidal n-Type CdSe/CdS Quantum Dots

We examine the effects of CdS shell growth on photochemical reduction of colloidal CdSe quantum dots (QDs) and describe the spectroscopic properties of the resulting n-type CdSe/CdS QDs. CdS shell growth greatly slows electron trapping. Because of this imp ...

2017

Surface origin and control of resonance Raman scattering and surface band gap in indium nitride

Esther Alarcon Llado

Resonance Raman scattering measurements were performed on indium nitride thin films under conditions where the surface electron concentration was controlled by an electrolyte gate. As the surface condition is tuned from electron depletion to accumulation, ...

Iop Publishing Ltd2016

Small molecule hole transporting material for optoelectronic and photoelectrochemical devices

Michael Graetzel, Mohammad Khaja Nazeeruddin, Paul Gratia

The present invention relates to a compd. of formula (I) based on carbazole substituted by diphenylamine and used as org. hole conductors or hole transporting material in a optoelectronic or photoelectrochem. device. D being being selected from formula (1 ...

2016

Investigation of interactions in two-dimensional electron gases with angular resolved photoemission spectroscopy

Carola Strasser

In this thesis, angular resolved photoemission spectroscopy (ARPES) is used to study the electronic structure of different two-dimensional electron systems (2DES). This technique is very surface sensitive and the most direct method to probe the surface ban ...

EPFL2015

Arsenic related defect states resonant with the semiconductor conduction band at the In0.53Ga0.47As/oxide interface: A density functional study

Alfredo Pasquarello, Giacomo Francesco Leonardo Miceli, Davide Colleoni

An arsenic related defect at the In0.53Ga0.47As/oxide interface is studied through density functional theory. This defect corresponds to an As-As timer which transforms into two doubly occupied As dangling bonds upon capture of two electrons. The defect ch ...

Elsevier2015

Room-Temperature Ballistic Transport in III-Nitride Heterostructures

Elison de Nazareth Matioli

Room-temperature (RT) ballistic transport of electrons is experimentally observed and theoretically investigated in III-nitrides. This has been largely investigated at low temperatures in low band gap III-V materials due to their high electron mobilities. ...

American Chemical Society2015

MoS2 and semiconductors in the flatland

Andras Kis, Oleg Yazyev

The fascinating properties of graphene, the first two-dimensional (2D) material, and the accompanying strong activity in the research community have sparked a renewed interest in related layered crystalline materials with unique electronic and optical prop ...

Elsevier2015

Probing the electron-phonon interaction in correlated systems with coherent lattice fluctuation spectroscopy

Fabrizio Carbone, Frank van Mourik, Christopher Alexander Arrell, Edoardo Baldini, Andreas Helmut Christian Mann, Kazimierz Conder

Tailoring the properties of correlated oxides is accomplished by chemical doping, pressure, temperature, or magnetic field. Photoexcitation is a valid alternative to reach out-of-equilibrium states otherwise inaccessible. Here, we quantitatively estimate t ...

Amer Physical Soc2015

Modeling the imaginary branch in III-V tunneling devices: Effective mass vs k.p

Mihai Adrian Ionescu, Cem Alper, José Luis Padilla de la Torre, Pierpaolo Palestri

In this work we extend an effective mass model for computing the drain current of tunnel-FETs to account for the anti-crossing of the light- and heavy-hole branches of the valence band. The model is validated by comparison with NEGF simulations based on a ...

IEEE2015

Electron-Phonon Coupling in the Bulk of Anatase

Marco Grioni, Arnaud Magrez, Helmuth Berger, Philippe Bugnon, Simon Karl Moser, Sara Fatale

We investigate the polaronic ground state of anatase TiO2 by bulk-sensitive resonant inelastic x-ray spectroscopy (RIXS) at the Ti L3 edge. We find that the formation of the polaron cloud involves a single 95 meV phonon along the c axis, in addition to the ...

American Physical Society2015

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