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TID and displacement damage effects are studied for vertical and lateral power MOSFETs in five different technologies in view of the development of radiation-tolerant fully integrated DC-DC converters. Investigation is pushed to the very high level of radi ...
This article explores the main tradeoffs in design of power and area efficient bandgap voltage reference (BGR) circuits. A structural design methodology for optimizing the silicon area and power dissipation of CMOS BGRs will be introduced. For this purpose ...
Semiconductor nanowires are an emerging class of materials with great potential for applications in future electronic devices. The small footprint and the large charge-carrier mobilities of nanowires make them potentially useful for applications with high- ...
In this paper we report the fabrication and detailed electrical characterization of a ferroelectric transistor (Fe-FET) aiming at the extraction of its physical threshold voltage. The investigated transistors are fabricated on doped bulk silicon with a gat ...
In this paper, we propose a new category of current-mode Łukasiewicz OR and AND logic neurons and ensuing logic networks along with their ultra-low power realization. The introduced circuits can operate in a wide range of the input signals varying in-betwe ...
We present a new electronic device – the single-electron bipolar avalanche transistor (SEBAT) – which allows for the detection of single charges with a bandwidth typically above 1 GHz, exceeding by far the bandwidth of other room-temperature single-electro ...
The progress in the technology of microelectronic devices has led to a strong miniaturization and high performance for circuits and systems, enabling modern applications such as mobile computing and communications. Today, remaining "off-chip" components th ...
We show that logical signals encoded in bistable states in semiconductor microcavities can be generated and controlled electronically by exploiting the electrical sensitivity of Tamm-plasmon-exciton-polariton modes. The signals can be transported along pol ...
Design considerations and performance of n(++) GaN/InAlN/AlN/GaN normally off high-electron mobility transistors (HEMTs) are analyzed. Selective and damage-free dry etching of the gate recess through the GaN cap down to a 1-nm-thick InAlN barrier secures p ...
This paper discusses techniques, limitations and possible future developments of circuits based on transistors operated in the weak inversion (w.i.) mode, also called subthreshold mode. In analog circuits, w.i. is reached at very low current, but it is als ...
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