Publication
Wide-field time-gated SPAD imager for phasor-based FLIM applications
Related publications (33)
Ambipolar Gate-Controllable SiNW FETs for Configurable Logic Circuits With Improved Expressive Capability
Giovanni De Micheli, Davide Sacchetto, Yusuf Leblebici
In this letter, we report on the fabrication and characterization of ambipolar silicon-nanowire (SiNW) field-effect transistors (FETs) with a double-independent-gate (DIG) structure for polarity control. Several structures are fabricated, showing the effec ...
Institute of Electrical and Electronics Engineers2012Generalized Airport Gate Assignment
We consider the problem of assigning gates to a large airline at its hub airport in both planning and operations mode. The first objective in planning mode assigns airport gates for a given passenger flow data and pedestrian distances between the gates, su ...
2011Uniaxially tensile strained accumulation-mode gate-all-around Si nanowire nMOSFETs
Mihai Adrian Ionescu, Didier Bouvet, Wladyslaw Grabinski, Mohammad Najmzadeh
In this work we report an experimental study on accumulation-mode (AM) gate-all-around (GAA) nMOSFETs based on silicon nanowires with uniaxial tensile strain. Their electrical characteristics are studied from room temperature up to ~400 K and carrier mobil ...
2011Low-Noise Microwave Performance of 0.1 mu m Gate AlInN/GaN HEMTs on SiC
Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Marcus Gonschorek
We report the first microwave noise characterization of AlInN/GaN HEMTs. Transistors with a 0.1 mu m gate implemented on a semi-insulating SiC substrate achieve a maximum current density of 1.92 A/mm at V-GS = 0 V, a measured transconductance g(M) = 480 mS ...
2010Control of Ferromagnetism in a (Ga,Mn)As - Based Multiferroic System via a Ferroelectric Gate
Nava Setter, Igor Stolichnov, Harry Joseph Trodahl, Sebastian Riester
We report the implementation of a ferroelectric gate field effect transistor (FeFET) with a ferromagnetic (Ga,Mn)As conducting channel. The Curie temperature T-C in the channel is modulated by non-volatile poling of the gate. The ferroelectric state, and t ...
Amer Inst Physics, 2 Huntington Quadrangle, Ste 1No1 D, Melville, Ny 11747-4501 Usa2009Oscillator Based on Suspended Gate MOS Transistors
Mihai Adrian Ionescu, Marco Mazza, Yogesh Singh Chauhan, Alexandru Rusu
The paper deals with the oscillator applications based on vibrating mode of the suspended gate SG-MOSFET transistor. In order to simulate the electrical behavior of the transistor a small-signal equivalent circuit of the gate is proposed and validated. An ...
2008Prospects for logic-on-a-wire
Giovanni De Micheli, Mihai Adrian Ionescu, David Atienza Alonso, Didier Bouvet, Kirsten Emilie Moselund, Yusuf Leblebici, Mohamed Haykel Ben Jamaa
In this paper we present the top-down fabrication of gate-all-around (GAA) and body-tied @W-gate devices by a combination of etching and oxidation steps resulting in a local silicon-on-insulator structure. The GAA has advantages in terms of enhanced curren ...
2008Gate-lag and drain-lag effects in (GaN)/InAlN/GaN and InAlN/AlN/GaN HEMTs
Nicolas Grandjean, Jean-François Carlin, Marcus Gonschorek
Gate and drain-lag effects are studied in (GaN)/InAlN/GaN and InAlN/AlN/GaN HEMTs grown on sapphire. Electron trapping on the surface states between the gate and the drain forming the net negative charge up-to similar to 2 x 10(13) cm(-2) is found to be re ...
2007Fabrication of silicon nano wires and gate-all-around MOS devices
Didier Bouvet, Kirsten Emilie Moselund
The invention relates to methods for manufacturing semiconductor devices. Processes are disclosed for implementing suspended single crystal silicon nano wires (NWs) using a combination of anisotropic and isotropic etches and spacer creation for sidewall pr ...
2007Design for Reliability of Nanometer-Scale Electronics under High Defect Density
Alexandre Schmid, Yusuf Leblebici, Milos Stanisavljevic
High defect density exhibited by nanoelectronic technologies, and parameter variability already affecting the operation of very-deep submicron CMOS systems demand for a combination of specific solutions, focusing at each various levels of abstraction in th ...
2006