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Subthermionic negative capacitance ion sensitive field-effect transistor

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Subthermionic negative capacitance ion sensitive field-effect transistor

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DRAM Based on Hysteresis in Impact Ionization Single-Transistor-Latch

1T Memory Cell Based on PVDF-TrFE Field Effect Transistor

Demonstration of subthrehold swing smaller than 60mV/decade in Fe-FET with P(VDF-TrFE)/SiO₂ gate stack

Transient charge pumping as a new technique for a higher sensitivity SOI MOSFET photodetector

Transient charge pumping as a new technique for a higher sensitivity SOI MOSFET photodetector

Hybrid CMOS-SET devices and circuits

Extraction of FET parameters at low drain bias by taking into account the dependence of mobility on 2D electron gas concentration

Design and analysis techniques for dynamic current mirrors

The Influence of the pH on the Electrolyte-SiO2-Si System Studied by Ion-sensitive Fet Measurements and Quasistatic C-V Measurements

Negative Capacitance as Universal Digital and Analog Performance Booster for Complementary MOS Transistors

1T Memory Cell Based on PVDF-TrFE Field Effect Transistor

Demonstration of subthrehold swing smaller than 60mV/decade in Fe-FET with P(VDF-TrFE)/SiO₂ gate stack

Transient charge pumping as a new technique for a higher sensitivity SOI MOSFET photodetector

Negative Capacitance as Universal Digital and Analog Performance Booster for Complementary MOS Transistors

DRAM Based on Hysteresis in Impact Ionization Single-Transistor-Latch

Transient charge pumping as a new technique for a higher sensitivity SOI MOSFET photodetector

Hybrid CMOS-SET devices and circuits

Extraction of FET parameters at low drain bias by taking into account the dependence of mobility on 2D electron gas concentration

Design and analysis techniques for dynamic current mirrors

The Influence of the pH on the Electrolyte-SiO2-Si System Studied by Ion-sensitive Fet Measurements and Quasistatic C-V Measurements