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Impact of defects on Auger recombination in c-plane InGaN/GaN single quantum well in the efficiency droop regime

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The nanoscale impact of individual nonradiative point defects on InGaN/GaN quantum wells

Thomas Fjord Kjaersgaard Weatherley

Today's world depends on optoelectronic devices: light-emitting diodes illuminate our houses and backlight the displays on our gadgets, while laser diodes underpin fibre-optic communication. Such optoelectronic devices rely on crystalline semiconductor het ...

EPFL2023

Chemical Trend of Nonradiative Recombination in Cu(In,Ga)Se2 Alloys

Stefano Falletta

Nonradiative recombination in Cu(In,Ga)Se2 (CIGS) solar cells has long been attributed to the antisite defects MCu (M = In, Ga), but the underlying mechanism is still elusive. Using rigorous first-principles calculations, we demonstrate that the antisites ...

AMER PHYSICAL SOC2023

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Predictive synthesis–structure–property relationships are at the core of materials design for novel applications. In this regard, correlations between the compositional stoichiometry variations and functional properties are essential for enhancing the perf ...

2022

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Deep defects have a fundamental role in determining the electro-optical characteristics and in the efficiency of InGaN light-emitting diodes (LEDs). However, modeling their effect on the electrical characteristics of the LED is not straightforward. In this ...

SPIE-INT SOC OPTICAL ENGINEERING2022

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We investigate the density of defects and the degradation rate in InGaN light-emitting diodes having identical dislocation density and epitaxial structure, but different indium content in the quantum well (QW; 12%, 16%, 20%). Our results, based on combined ...

IOP PUBLISHING LTD2021

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c-plane GaN/AlN quantum dots (QDs) are promising zero-dimensional quantum nanostructures that exhibit single photon emission properties up to room temperature and even above. In this context, it is of prime interest to gain a deeper insight into the recomb ...

AMER INST PHYSICS2021

Progress in Violet Light-Emitting Diodes Based on ZnO/GaN Heterojunction

Eric Feltin, Mauro Mosca

Progress in light-emitting diodes (LEDs) based on ZnO/GaN heterojunctions has run into several obstacles during the last twenty years. While both the energy bandgap and lattice parameter of the two semiconductors are favorable to the development of such de ...

MDPI2020

Two-dimensional (2D) materials have attracted increasing attention over the last decade owing to their remarkable mechanical, electrical and optical properties. Following the groundbreaking discovery of graphene, a plethora of other atomically-thin materia ...

EPFL2020

Since the seminal report about the first Candela-class-brightness InGaN blue light-emitting diodes (LEDs) by Shuji Nakamura et al. in 1994, III-nitride semiconductors have been one of the most important platforms for optoelectronic devices. The achieve ...

EPFL2019

Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Mauro Mosca, Camille Haller

Two types of near-UV light-emitting diodes (LEDs) with an InGaN/GaN single quantum well (QW) differing only in the presence or absence of an underlayer (UL) consisting of an InAlN/GaN superlattice (SL) were examined. The InAlN-based ULs were previously sho ...

AMER INST PHYSICS2019