Publication
Characterization and Modeling of Total Ionizing Dose Effects on Nanoscale MOSFETs for Particle Physics Experiments
Related publications (81)
Radiation-Induced Charge Trapping in Shallow Trench Isolations of FinFETs
We provide comprehensive experimental data and technology computer-aided design (TCAD) simulations to clarify total-ionizing-dose mechanisms in 16-nm Si FinFETs. In n-channel FinFETs irradiated to ultrahigh doses, the transconductance evolution rebounds (i ...
Ieee-Inst Electrical Electronics Engineers Inc2024Radiation Hardness of MALTA2, a Monolithic Active Pixel Sensor for Tracking Applications
Edoardo Charbon, Francesco Piro, Ashish Sharma
MALTA is a depleted monolithic active pixel sensor (DMAPS) developed in the Tower Semiconductor 180-nm CMOS imaging process. Monolithic CMOS sensors offer advantages over current hybrid imaging sensors in terms of both increased tracking performance due to ...
Piscataway2023Influence of Fin and Finger Number on TID Degradation of 16-nm Bulk FinFETs Irradiated to Ultrahigh Doses
This article investigates the fin- and finger-number dependence of the total ionizing dose (TID) degradation in 16-nm bulk Si FinFETs at ultrahigh doses. n- and p-FinFETs designed with different numbers of fins and fingers are irradiated up to 500 Mrad(SiO ...
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022Increased Device Variability Induced by Total Ionizing Dose in 16-nm Bulk nFinFETs
This article investigates the device variability induced by the total ionizing dose (TID) effects in a commercial 16-nm bulk nFinFETs, using specially designed test structures and measurement procedures aimed at maximizing the matching between devices. DC ...
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022A novel approach for SPICE modeling of light and radiation effects in ICs
Modeling the interaction of ionizing radiation, either light or ions, in integrated circuits is essential for the development and optimization of optoelectronic devices and of radiation-tolerant circuits. Whereas for optical sensors photogenerated carriers ...
EPFL2021Cryogenic MOSFET Modeling for Large-Scale Quantum Computing
Promising results of state-of-the-art quantum computers fuel a world-wide effort in academic and private research laboratories to scale up the number of qubits and improve their characteristics in large arrays. To meet the scale-up challenge, innovative mi ...
EPFL2021TID Degradation Mechanisms in 16-nm Bulk FinFETs Irradiated to Ultrahigh Doses
This article investigates the total ionizing dose (TID) degradation mechanisms of 16-nm bulk Si FinFETs at ultrahigh doses. n- and p-FinFETs with several channel lengths are irradiated up to 1 Grad(SiO2) and then annealed for 24 h at 100 degrees C. Irradia ...
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2021Development of a Data Concentrator ASIC for the High Luminosity upgrade of the CMS Outer Tracker detector with tracking trigger
With the increasing capabilities of the microelectronics technology, future particle detectors in high energy physics will be able to yield high-level features that are not only simple geometrical positions or energy measurement in the silicon sensors used ...
EPFL2021Kilowatt-range Picosecond Switching Based on Microplasma Devices
Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Armin Jafari
Plasma formation in micro- and nano-scales enables an ultrahigh-dv/dt picosecond switching in an integrated circuit form factor. Such on-chip plasma devices could provide a transformative approach to achieving high-power levels at very high frequencies, fa ...
2021Ionizing-Radiation Response and Low-Frequency Noise of 28-nm MOSFETs at Ultrahigh Doses
Total ionizing dose (TID) mechanisms are investigated in 28-nm MOSFETs via dc static and low-frequency noise measurements. nMOSFETs and pMOSFETs are irradiated up to 1 Grad(SiO2) and annealed at high temperatures. TID sensitivity depends on the channel len ...
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020