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A new method to release MEMS chips from a wafer without dicing is presented. It can be applied whenever SOI wafers are used that are structured from both the device and the handle side using DRIE. This method enables the release of extremely fragile struct ...
After microelectromechanical systems (MEMS) devices have been well established, components of higher complexity are now developed. Particularly, the combination with optical components has been very successful and have led to optical MEMS. The technology o ...
We have designed and realised a new type of microsystem for the electrical characterisation of arrays of living cells for biomedical diagnostic purposes. We have used deep plasma etching for the fabrication of microholes and micro-fluidic channels in silic ...
Our recent developments concerning the fabrication of polymer microchips and their applications for biochemical analyses are reviewed. We first describe two methods of fabrication of polymer microfluidic chips, namely UV-laser photoablation and plasma etch ...
Epitaxial 50 nm and 200 nm thick films of Pb(Zr0.40Ti0.60)O-3 (PZT) have been deposited by reactive rf magnetron sputtering on conductive Nb-doped SrTiO3(100) (STO). The patterning process involved electron beam lithography of polymethylmethacrylate (PMMA) ...
We report about a new process we have developed to fabricate miniaturized double layer octupoles that can be operated as electrostatic scanner/stigmators for charged particle beams. The fabrication process is based on deep reactive ion etching (DRIE) and a ...
We report an all-dry, two-step, surface nanoengineering method to fabricate nanomechanical elements without photolithography. It is based on the local deposition through a nanostencil of a well-defined aluminum pattern onto a silicon/silicon-nitride substr ...
Evaporation through shadow masks (nanostencils) overcomes the limitations typically given by patterning methods involving conventional optical lithography and etching, such as diffraction limits and etch-selectivity. This paper demonstrates the fabrication ...
The flexibility of the new available Inductively Coupled Plasma (ICP) reactors provides a lot of possibilities for process development in dry etching field. Deep anisotropic etching of silicon is now possible under control (etch rate, profiles, uniformity) ...
Low-frequency noise (LFN) characteristics of dry-and wet-etched InAlAs/InGaAs HEMTS have been studied. It is found that due to passivation of deep traps by hydrogen the excess LFN (1/f and G-R) in dry-etched HEMTs is significantly lower than in wet-etched ...
