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Enhancement-mode Multi-channel AlGaN/GaN Transistors with LiNiO Junction Tri-Gate
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The outstanding properties of Gallium Nitride (GaN) have enabled considerable improvements in the performance of power devices compared to traditional silicon technology, resulting in more efficient and highly compact power converters. GaN power technology ...
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Gallium Nitride (GaN) is a wonder material which has widely transformed the world by enabling
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Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the fabrication of power devices. Among the semiconductors for which power devices are already available in the market, GaN has the widest energy gap, the largest critical ...
AIP Publishing2021