Impact of Fin Width on Tri-Gate GaN MOSHEMTs

Related publications (31)

LiNiO Junction Gate for High-performance Enhancement-mode GaN Power Transistor

GaN metal-oxide-semiconductor high electron mobility transistors (MOS)HEMTs) offer outstanding properties for next-generation power electronics devices. The high conductivity, high voltage blocking capability, high operation frequency, and device-level int ...

EPFL2022

Influence of Fin and Finger Number on TID Degradation of 16-nm Bulk FinFETs Irradiated to Ultrahigh Doses

Christian Enz

This article investigates the fin- and finger-number dependence of the total ionizing dose (TID) degradation in 16-nm bulk Si FinFETs at ultrahigh doses. n- and p-FinFETs designed with different numbers of fins and fingers are irradiated up to 500 Mrad(SiO ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Page 3 of 4

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LiNiO Junction Gate for High-performance Enhancement-mode GaN Power Transistor

Taifang Wang

EPFL2022

Influence of Fin and Finger Number on TID Degradation of 16-nm Bulk FinFETs Irradiated to Ultrahigh Doses

Christian Enz

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Hard and Soft Switching Losses in Power Converters: Role of Transistor Output Capacitance

Palliyage Srilak Nirmana Perera

To best utilize power converters, a sound understanding of the relationship between the circuit topology and the power-semiconductor-device characteristics is required. This is especially important in high-frequency switching, where device parasitics start ...

EPFL2022

New Technologies to Enhance the Figures-of-Merit of GaN Power Devices

Luca Nela

Gallium Nitride (GaN) has enabled groundbreaking developments in the field of optoelectronics and radio frequency communication. More recently, GaN devices for power conversion applications have demonstrated excellent potential. Thanks to Gallium Nitride w ...

EPFL2022

Highly Sensitive Detection of the Antidepressant Fluoxetine With an Extended Gate Field Effect Transistor

Mihai Adrian Ionescu, Shokoofeh Sheibani

Fluoxetine (FL) is one of the selective serotonin reuptake inhibitors, which is used as an anti-depressant, as well as anti-panic drug. In this work, a sensor for label-free recognition of trace amounts of FL is introduced, which is based on an extended ga ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

A perspective on multi-channel technology for the next-generation of GaN power devices

Elison de Nazareth Matioli, Luca Nela

The outstanding properties of Gallium Nitride (GaN) have enabled considerable improvements in the performance of power devices compared to traditional silicon technology, resulting in more efficient and highly compact power converters. GaN power technology ...

AIP Publishing2022

Extended-gate field-effect transistor with aptamer functionalisation layer for measuring hormone concentration in biofluids and corresponding fabrication method

Mihai Adrian Ionescu, Shokoofeh Sheibani

The present invention concerns a biosensor (1) for sensing stress hormone cortisol concentration in a biofluid (27). The biosensor (1) comprises: an electrical transistor transducer (3) comprising a transistor gate electrode (17); a sensing electrode eleme ...

2022

Edge-Contact MoS2 Transistors Fabricated Using Thermal Scanning Probe Lithography

Jürgen Brugger, Giovanni Boero, Xia Liu, Ana Conde Rubio

The science and engineering of two-dimensional materials (2DMs), in particular, of 2D semiconductors, is advancing at a thriving pace. It is well known that these delicate few-atoms thick materials can be damaged during the processing toward their integrat ...

2022

Millimeter-wave to near-terahertz sensors based on reversible insulator-to-metal phase transition in Vanadium dioxide

Fatemeh Qaderi Rahaqi

Millimeter-wave (mm-wave) and terahertz (THz) detection has opened a significant research direction in imaging, sensing, spectroscopy, and ultrafast wireless communication. The sensitivity of the phase transition to electromagnetic waves in Vanadium dioxid ...

EPFL2022

High-Temperature HEMT Mode

Farzan Jazaeri, Nika Sahebghalam

Taking into account the impact of self-heating and temperature rise effects, this work presents a physics-based analytical model for HEMTs, operating continuously from room temperature to high temperatures in linear and saturation regimes. Relying on the c ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Page 3 of 4

Extended-gate field-effect transistor with aptamer functionalisation layer for measuring hormone concentration in biofluids and corresponding fabrication method

Mihai Adrian Ionescu, Shokoofeh Sheibani

2022