Arséniure d'aluminium-gallium

Applied sciences
Électrotechnique
Photonique
Photonique

Publications associées (26)

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2D transition metal dichalcogenides

Andras Kis, Oleg Yazyev, Dmitry Ovchinnikov, Sajedeh Manzeli, Diego José Pasquier

Graphene is very popular because of its many fascinating properties, but its lack of an electronic bandgap has stimulated the search for 2D materials with semiconducting character. Transition metal dichalcogenides (TMDCs), which are semiconductors of the t ...

Nature Publishing Group2017

Ordered nanostructures on silicon substrates : from the top-down to the bottom-up

Jelena Vukajlovic Plestina

Silicon is today the main material used in electronics. It is a very advanced and mature technology. It is therefore clear that new technological concepts and materials should be introduced through the integration on the silicon platform. III-V semiconduct ...

EPFL2017

Atomically Thin Two-dimensional Materials Grown by Molecular Beam Epitaxy

Ming-Wei Chen

Atomically thin two-dimensional (2D) materials have attracted great interest due to their unique optoelectronic properties which are very different from their bulk counterparts. Most of the proof-of-concept devices, however, have been demonstrated using th ...

EPFL2017

GaAs nanowires: from doping to plasmonic hybrid devices

Alberto Casadei

Semiconductor nanowires (NWs) are filamentary crystals with the diameter ranging from few tens up to few hundreds of nanometers. In the last 20 years, they have been intensively studied for the prospects that their unique quasi-one dimensional shape offers ...

EPFL2016

Atomic Scale Observation of Chemical and Electronic Properties of Metal-Oxide Surfaces

Christian Alexander Stephan Dette

To meet the future global energy demand - an estimated additional 10 terawatts (TWs) per year in 2050 - a diversification of energy sources and fuels is needed. Solar energy represents a prominent alternative energy source. An important material for these ...

EPFL2016

Origin of Fermi-level pinning at GaAs/oxide interfaces through the hybrid functional study of defects

Davide Colleoni

Gallium arsenide is currently under scrutiny for replacing silicon in microelectronic devices due to its high carrier mobilities. However, the widespread use of this semiconductor is hampered by the intrinsic difficulty of producing high-quality interfaces ...

EPFL2015

Electronic properties of transition-metal dichalcogenides

Andras Kis

Graphene is not the only prominent example of two-dimensional (2D) materials. Due to their interesting combination of high mechanical strength and optical transparency, direct bandgap and atomic scale thickness transition-metal dichalcogenides (TMDCs) are ...

Cambridge Univ Press2015

Ultrafast spectroscopy of wide bandgap semiconductor nanostructures

Mehran Shahmohammadi

Group III-nitrides have been considered a promising choice for the realization of optoelectronic devices since 1970. Since the first demonstration of the high-brightness blue light-emitting diodes (LEDs) by Shuji Nakamura and coworkers, the fabrication of ...

EPFL2015

An ultra-low temperature scanning Hall probe microscope for magnetic imaging below 40 mK

Henrik Moodysson Rønnow, Julian Piatek

We describe the design of a low temperature scanning Hall probe microscope (SHPM) for a dilution refrigerator system. A detachable SHPM head with 25.4 mm OD and 200 mm length is integrated at the end of the mixing chamber base plate of the dilution refrige ...

American Institute of Physics2014

TiO2 Anatase with a Bandgap in the Visible Region

Klaus Kern, Christian Alexander Stephan Dette, Feliciano Giustino, Christopher Seiji Kley

TiO2 anatase plays a central role in energy and environmental research. A major bottleneck toward developing artificial photosynthesis with TiO2 is that it only absorbs ultraviolet light, owing to its large bandgap of 3.2 eV. If one could reduce the bandga ...

Amer Chemical Soc2014

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