Concept

Arséniure d'aluminium-gallium

Publications associées (70)

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The integration of new materials mediating light-matter interaction in nanoscale devices is a persistent goal in nanophotonics. One of these materials is Gallium phosphide, which offers an attractive combination of a high refractive index (n=3.05 at a wave ...

EPFL2019

Enhancing Optical Nonlinear Processes Performance of Silicon Nitride Waveguides

Camille Sophie Brès, Davide Grassani, Eirini Tagkoudi

Silicon nitride has recently attracted significant interest for nonlinear integrated optics. In addition to its excellent linear properties, silicon nitride offers a bandgap larger than silicon, and a wide transparency window spanning from the visible all ...

IEEE2018

Excitation and time resolved spectroscopy of SAW harmonics up to GHz regime in photolithographed GaAs devices

Pasquale Scarlino, Marco Scigliuzzo

In this work, we demonstrate the excitation of surface acoustic waves (SAW) harmonics up to GHz regime in photolitographed devices fabricated on gallium arsenide (GaAs) by acting on the IDT metallization ratio among the finger width and pitch. Specifically ...

2017

2D transition metal dichalcogenides

Andras Kis, Oleg Yazyev, Dmitry Ovchinnikov, Diego José Pasquier, Sajedeh Manzeli

Graphene is very popular because of its many fascinating properties, but its lack of an electronic bandgap has stimulated the search for 2D materials with semiconducting character. Transition metal dichalcogenides (TMDCs), which are semiconductors of the t ...

Nature Publishing Group2017

Ordered nanostructures on silicon substrates

Jelena Vukajlovic Plestina

Silicon is today the main material used in electronics. It is a very advanced and mature technology. It is therefore clear that new technological concepts and materials should be introduced through the integration on the silicon platform. III-V semiconduct ...

EPFL2017

Atomically thin two-dimensional (2D) materials have attracted great interest due to their unique optoelectronic properties which are very different from their bulk counterparts. Most of the proof-of-concept devices, however, have been demonstrated using th ...

EPFL2017

Semiconductor nanowires (NWs) are filamentary crystals with the diameter ranging from few tens up to few hundreds of nanometers. In the last 20 years, they have been intensively studied for the prospects that their unique quasi-one dimensional shape offers ...

EPFL2016

THz time-domain spectroscopy and IR spectroscopy on MoS2

Andras Kis, Dumitru Dumcenco, Daniel Gabriel

In the increasing research field of 2D materials such as graphene, molybdenum disulfide MoS2 has attracted great interest due to the existence of a direct bandgap in monolayer MoS2, which gives the possibility of achieving MoS2 field-effect transistors or ...

Wiley-Blackwell2016

Origin of Fermi-level pinning at GaAs/oxide interfaces through the hybrid functional study of defects

Davide Colleoni

Gallium arsenide is currently under scrutiny for replacing silicon in microelectronic devices due to its high carrier mobilities. However, the widespread use of this semiconductor is hampered by the intrinsic difficulty of producing high-quality interfaces ...

EPFL2015

Electronic properties of transition-metal dichalcogenides

Andras Kis

Graphene is not the only prominent example of two-dimensional (2D) materials. Due to their interesting combination of high mechanical strength and optical transparency, direct bandgap and atomic scale thickness transition-metal dichalcogenides (TMDCs) are ...

Cambridge Univ Press2015