Publications associées à Circuit intégré à signaux mixtes

Combinatorial HV-CVD survey of barium triisopropyl cyclopentadienyl and titanium tetraisopropoxide for the deposition of BaTiO3

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Barium titanate is a very promising material for the integration of optical communication into electronic integrated circuits. For a successful integration into CMOS compatible technology, a growth process has to be found which allows forming crystalline B ...

Wiley-VCH Verlag Berlin2015

Fine Pitch 3D-TSV Based High Frequency Components for RF MEMS Applications

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Wolfgang Amadeus Vitale, Josef Weber

The development of interconnections suitable for radio- frequency (RF) and millimeter-wave (mm-wave) applications is of foremost importance for the feasibility of high-quality substrate-integrated devices. For this purpose, we introduce and validate the te ...

2015

A 3.52 Gb/s mmWave Baseband with Delayed Decision Feedback Sequence Estimation in 40 nm

Andreas Peter Burg, Nicholas Alexander Preyss, Carl Christian Sten Dominic Senning

We present a digital baseband ASIC for 60 GHz single-carrier (SC) transmission that is optimized for communication scenarios in which most of the energy is concentrated in the first few channel taps. Such scenarios occur for example in office environments ...

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Multiple Independent Gate FETs: How Many Gates Do We Need?

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Luca Gaetano Amarù, Subhasish Mitra

Multiple Independent Gate Field Effect Transistors (MIGFETs) are expected to push FET technology further into the semiconductor roadmap. In a MIGFET, supplementary gates either provide (i) enhanced conduction properties or (ii) more intelligent sw ...

IEEE2015

Large-area MoS2 grown using H2S as the sulphur source

Philippe Gillet, Aleksandra Radenovic, Andras Kis, Duncan Thomas Lindsay Alexander, Dumitru Dumcenco, Oriol López Sánchez, Dmitry Ovchinnikov

We report on the growth of molybdenum disulphide (MoS2) using H2S as a gas-phase sulfur precursor that allows controlling the domain growth direction of domains in both vertical (perpendicular to the substrate plane) and horizontal (within the substrate pl ...

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Single-Layer MoS2 Electronics

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CONSPECTUS: Atomic crystals of two-dimensional materials consisting of single sheets extracted from layered materials are gaining increasing attention. The most well-known material from this group is graphene, a single layer of graphite that can be extract ...

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Compact modeling of DG-Tunnel FET for Verilog-A implementation

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In this work, a compact model based on an analytical closed form solution of the 1D Poisson's equation for a double-gate Tunnel FET is derived. Furthermore, the current levels are estimated by implementing an algorithm based on the Kane's band-to-band tunn ...

IEEE2015

Manycore Network Interfaces for In-Memory Rack-Scale Computing

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Datacenter operators rely on low-cost, high-density technologies to maximize throughput for data-intensive services with tight tail latencies. In-memory rack-scale computing is emerging as a promising paradigm in scale-out datacenters capitalizing on commo ...

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Circuit intégré à signaux mixtes

Polarity Control at Runtime

Combinatorial HV-CVD survey of barium triisopropyl cyclopentadienyl and titanium tetraisopropoxide for the deposition of BaTiO3

Fine Pitch 3D-TSV Based High Frequency Components for RF MEMS Applications

A 3.52 Gb/s mmWave Baseband with Delayed Decision Feedback Sequence Estimation in 40 nm

Multiple Independent Gate FETs: How Many Gates Do We Need?

Large-area MoS2 grown using H2S as the sulphur source

Low-Power Circuit and System Design for Epileptic Seizure Detection at High Spatiotemporal Resolution

Single-Layer MoS2 Electronics

Compact modeling of DG-Tunnel FET for Verilog-A implementation

Manycore Network Interfaces for In-Memory Rack-Scale Computing

Graph Chatbot

Chattez avec Graph Search

Multiple Independent Gate FETs: How Many Gates Do We Need?

Combinatorial HV-CVD survey of barium triisopropyl cyclopentadienyl and titanium tetraisopropoxide for the deposition of BaTiO3

Manycore Network Interfaces for In-Memory Rack-Scale Computing

A 3.52 Gb/s mmWave Baseband with Delayed Decision Feedback Sequence Estimation in 40 nm

Polarity Control at Runtime

Compact modeling of DG-Tunnel FET for Verilog-A implementation

Low-Power Circuit and System Design for Epileptic Seizure Detection at High Spatiotemporal Resolution

Fine Pitch 3D-TSV Based High Frequency Components for RF MEMS Applications

Single-Layer MoS2 Electronics

Large-area MoS2 grown using H2S as the sulphur source