Concept

History of the transistor

Publications associées (366)

Leakage mechanisms and contact technologies in InAlN/GaN high electron mobility transistors

GaN based electronic devices have progressed rapidly over the past decades and are nowadays starting to replace Si and classical III-V semiconductors in power electronics systems and high power RF amplifiers. AlGaN/GaN heterostructures have been, until rec ...

EPFL2015

Multiple-Independent-Gate Nanowire Transistors: From Technology to Advanced SoC Design

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Luca Gaetano Amarù, Jian Zhang

The focus of this chapter is a novel class of devices such as Multiple-Independent-Gate Field-Effect Transistor (MIGFET) which can provide better functionality and flexibility as compared to classic Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFE ...

The Institution of Engineering and Technology (IET)2015

Towards Functionality-Enhanced Devices: Controlling the Modes of Operation in Three-Independent-Gate Transistors (invited)

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Jian Zhang, Michele De Marchi

In this paper, we introduce the different modes of operation achievable with Three-Independent-Gate Field-Effect Transistors (TIGFETs) and report results on fabricated devices including: (i) the dynamic reconfiguration of the device polarity; (ii) t ...

2015

Band-Like Electron Transport with Record-High Mobility in the TCNQ Family

Nicola Marzari, Marco Gibertini

The occurrence of extremely pronounced band-like transport with very high electron mobility in fluorinated tetracyanoquinodimethane (F2-TCNQ) single-crystal field-effect transistors is discovered. This finding identifies the Fx-TCNQ f ...

Wiley-V C H Verlag Gmbh2015

Layout Technique for Double-Gate Silicon Nanowire FETs With an Efficient Sea-of-Tiles Architecture

Giovanni De Micheli, Shashi Kanth Bobba

As we advance into the era of nanotechnology, semiconductor devices are scaled down to their physical limits, thereby opening up venues for new transistor channel materials based on nanowires and nanotubes. Transistors based on nanowires and nanotubes inhe ...

Ieee-Inst Electrical Electronics Engineers Inc2015

Large-area MoS2 grown using H2S as the sulphur source

Philippe Gillet, Aleksandra Radenovic, Andras Kis, Duncan Thomas Lindsay Alexander, Dumitru Dumcenco, Oriol López Sánchez, Dmitry Ovchinnikov

We report on the growth of molybdenum disulphide (MoS2) using H2S as a gas-phase sulfur precursor that allows controlling the domain growth direction of domains in both vertical (perpendicular to the substrate plane) and horizontal (within the substrate pl ...

2015

Electronic properties of transition-metal dichalcogenides

Andras Kis

Graphene is not the only prominent example of two-dimensional (2D) materials. Due to their interesting combination of high mechanical strength and optical transparency, direct bandgap and atomic scale thickness transition-metal dichalcogenides (TMDCs) are ...

Cambridge Univ Press2015

A Fast Modular Method for True Variation-Aware Separatrix Tracing in Nanoscaled SRAMs

Adam Shmuel Teman

As memory density continues to grow in modern systems, accurate analysis of SRAM stability is increasingly important to ensure high yields. Traditional static noise margin metrics fail to capture the dynamic characteristics of SRAM behavior, leading to exp ...

Institute of Electrical and Electronics Engineers2015

Practical Applications of Tunnel Field Effect Transistors

Traditional metal-oxide-semiconductor field effect transistor scaling has advanced successfully over 50 years providing significant increases in transistor count per chip and operating frequency, thus enabled the built of ever more performant and complex s ...

EPFL2015

Large-Area Epitaxial Monolayer MoS2

Nicola Marzari, Anna Fontcuberta i Morral, Philippe Gillet, Aleksandra Radenovic, Andras Kis, Dumitru Dumcenco, Marco Gibertini, Yen-Cheng Kung, Oriol López Sánchez, Dmitry Ovchinnikov, Daria Krasnozhon, Simone Bertolazzi, Ming-Wei Chen, Kolyo Marinov

Two-dimensional semiconductors such as MoS2 are an emerging material family with wide-ranging potential applications in electronics, optoelectronics, and energy harvesting. Large-area growth methods are needed to open the way to applications. Control over ...

Amer Chemical Soc2015

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