Concept

Monocrystalline silicon

Publications associées (682)

Direct high-temperature growth of GaN on Si using trimethylaluminum preflow enabling vertically-conducting heterostructures

Elison de Nazareth Matioli, Alessandro Floriduz

In this work, we demonstrate that GaN can be directly grown at high temperature on Si(111) substrates by metalorganic CVD without using any intentional AlN buffer, by simply employing a trimethylaluminum (TMAl) preflow. We found that n-GaN layers directly ...

Iop Publishing Ltd2024

Bodily implant microelectrode and bodily implant microelectrode fabrication method

Sandro Carrara, Diego Ghezzi, Gian Luca Barbruni

The present invention concerns a bodily implantable or probe device and microelectrode fabrication method comprising providing at least one silicon substrate including an electronic device or unit; providing, on a first side of the silicon substrate, at le ...

2024

Enhancing Efficiency of Industrially-Compatible Monolithic Perovskite/Silicon Tandem Solar Cells with Dually-Mixed Self-Assembled Monolayers

Mohammad Khaja Nazeeruddin, Peng Gao, Ye Yang, Chaohui Li

The antisolvent-assisted spin-coating still lags behind the thermal evaporation method in fabricating perovskite films atop industrially textured silicon wafers in making monolithic perovskite/silicon solar cells (P/S-TSCs). The inhomogeneity of hole-selec ...

Wiley-V C H Verlag Gmbh2024

Recombination at metal/semiconductor interfaces represents the main limitation in mainstream c-Si solar cells, primarily based on the passivated emitter and rear cell (PERC) concept. Full-area passivating contacts based on SiOx/poly-Si stacks are a candida ...

EPFL2024

Data set for control of Ge island coalescence for the formation of nanowires on silicon.

Anna Fontcuberta i Morral, Alok Rudra, Santhanu Panikar Ramanandan, Joel René Sapera, Vladimir Dubrovskii, Sara Marti Sanchez

This document contains all the data and the details of the analysis used in the manuscript titled " Control of Ge island coalescence for the formation of nanowires on silicon." https://doi.org/10.1039/D3NH00573A ...

EPFL Infoscience2024

Performance and degradation in silicon PV systems under outdoor conditions in relation to reliability aspects of silicon PV modules - Summary of results of COST Action PEARL PV

Andrew Wayne Fairbrother, David Moser

This paper presents the main results of COST Action PEARL PV, aiming at finding connections between the observed performance of monitored PV systems and degradation causes and failure modes according to literature with a focus on the most dominant technolo ...

New York2023

Dynamic control of high-voltage actuator arrays by light-pattern projection on photoconductive switches

Herbert Shea, Amir Firouzeh, Edouard Franck Vincent Gustave Leroy, Vesna Bacheva, Aiste Balciunaite

The ability to control high-voltage actuator arrays relies, to date, on expensive microelectronic processes or on individual wiring of each actuator to a single off-chip high-voltage switch. Here we present an alternative approach that uses on-chip photoco ...

SPRINGERNATURE2023

Two-dimensional dopant layers (δ-layers) in semiconductors provide the high-mobility electron liquids (2DELs) needed for nanoscale quantum-electronic devices. Key parameters such as carrier densities, effective masses, and confinement thicknesses for 2DELs ...

WILEY2023

Pre-annealing for improved LPCVD deposited boron-doped poly-Si hole-selective contacts

Franz-Josef Haug, Luca Massimiliano Antognini, Josua Andreas Stückelberger, Xinyu Zhang, Zhao Wang, Jie Yang

We demonstrate the beneficial effect of a pre-annealing step prior to the boron diffusion on passivation and contact resistivity of industrially LPCVD deposited poly-Si/SiOX hole-selective contacts. We investigate the influence of the pre-annealing tempera ...

ELSEVIER2023

Rear textured p-type high temperature passivating contacts and their implementation in perovskite/silicon tandem cells

Christophe Ballif, Quentin Thomas Jeangros, Antoine Descoeudres, Andrea Ingenito, Arnaud Walter, Sylvain Nicolay, Soo-Jin Moon, Philippe Wyss

Silicon solar cells based on high temperature passivating contacts are becoming mainstream in the photovoltaic industry. Here, we developed a high-quality boron-doped poly-silicon hole contact. When combined with a co-processed phosphorus-doped poly-silico ...

Cambridge2023

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