Concept

Photolithographie

Publications associées (492)

Novel manufacturing methods for optical antennas

The resonant excitation of free electrons in metallic nanostructures enables extreme near field intensities along with a deep sub-wavelength localization of the electromagnetic energy. This has been exploited to enhance light-matter interaction down to the ...

EPFL2017

Fabrication of 2D Material Based NEMS Resonators

Tom Larsen, An Tran

2D materials such as graphene, MoS2 and phosphorene are promising candidates for resonating mechanical sensors due to excellent tunable electrical/- mechanical properties, low masses, and maximal surface to volume ratios. Mechanical resonators based on sup ...

2017

Micromechanics of Amorphous Metal/Polymer Hybrid Structures with 3D Cellular Architectures: Size Effects, Buckling Behavior, and Energy Absorption Capability

Stefano Mischler, Johann Michler, Cédric Frantz

By designing advantageous cellular geometries and combining the material size effects at the nanometer scale, lightweight hybrid microarchitectured materials with tailored structural properties are achieved. Prior studies reported the mechanical properties ...

Wiley-V C H Verlag Gmbh2017

In-Plane Plasmonic Antenna Arrays with Surface Nanogaps for Giant Fluorescence Enhancement

Jürgen Brugger, Duncan Thomas Lindsay Alexander, Pamina Winkler, Valentin Flauraud, Raju Regmi

Optical nanoantennas have a great potential for enhancing light-matter interactions at the nanometer scale, yet fabrication accuracy and lack of scalability currently limit ultimate antenna performance and applications. In most designs, the region of maxim ...

American Chemical Society2017

Giant five-photon absorption from multidimensional core-shell halide perovskite colloidal nanocrystals

Nripan Mathews, Qiang Xu

Multiphoton absorption processes enable many technologically important applications, such as in vivo imaging, photodynamic therapy and optical limiting, and so on. Specifically, higher-order nonlinear absorption such as five-photon absorption offers signif ...

Nature Publishing Group2017

Growth Of Organic Semiconductor Thin Films with Multi-Micron Domain Size and Fabrication of Organic Transistors Using a Stencil Nanosieve

Jürgen Brugger, Shenqi Xie, Valentin Flauraud

To grow small molecule semiconductor thin films with domain size larger than modern-day device sizes, we evaporate the material through a dense array of small apertures, called a stencil nanosieve. The aperture size of 0.5 μm results in low nucleation dens ...

Amer Chemical Soc2017

Small-scale metal castings, small-scale metal/transparent composite structures and process to produce same

Andreas Mortensen, Yves Bellouard, Raphaël Charvet, Cyril Dénéréaz

The method comprises at least the following steps: - exposing a substrate to focused laser irradiation at a preselected series of locations that trace a subset of the substrate volume that is connected to the surface of the substrate; some subsets of subst ...

2017

Panel: Looking Backwards and Forwards

Giovanni De Micheli

Ten years ago, at 90 nanometers, EDA was challenged and deemed inadequate in dealing with increasing complexity, power consumption, and sub-wavelength lithography, thus harming the progress of mobile phones. Today, at 10 nanometers, integration capacity ha ...

IEEE2016

Intensity and phase fields behind phase-shifting masks studied with high-resolution interference microscopy

Hans Peter Herzig, Toralf Scharf, Myun Sik Kim, Ali Naqavi, Krishnaparvathy Puthankovilakam

We try to find out the details of how light fields behind the structures of photomasks develop in order to determine the best conditions and designs for proximity printing. The parameters that we use approach real situations like structure printing at prox ...

SPIE-Intl Soc Optical Eng2016

Sub-20nm gaps in HSQ for ultra-scaled nanoelectronic devices

Maneesha Rupakula, Wolfgang Amadeus Vitale

We build sub-20 nm gaps in hydrogen silsesquioxane (HSQ) by electron beam lithography, to enable nano-template structures for selective epitaxial growth of Ge or III-V semiconductors for ultra-scaled electronic applications [1]. Gaps of this order have bee ...

2016

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