Publications associées à Courant de fuite

Polarization-enhanced GaN Schottky barrier diodes: Ultra-thin InGaN for high breakdown voltage and low Ron

Elison de Nazareth Matioli, Alessandro Floriduz, Zheng Hao

In this work, we present a concept that leverages the strong piezoelectric polarization field in InGaN, which counteracts the external electric field at reverse bias. We show that despite the smaller InGaN band-gap and lower critical electric field, its st ...

2024

A Delay and Power Efficient Voltage Level Shifter with Low Leakage Power

Alexandre Schmid, Mehdi Saberi

This paper presents a new power-efficient and high-speed voltage level shifter. In the proposed structure, the existing contentions at the internal nodes are reduced using auxiliary transistors and feedback networks, leading to a significant reduction in t ...

New York2023

Accurate Measurement of Dynamic ON-Resistance in GaN Transistors at Steady-State

Elison de Nazareth Matioli, Hongkeng Zhu

Accurate characterization of the dynamic ON-resistance (RON) degradation is important to predict conduction losses for gallium nitride high-electron-mobility transistors (GaN HEMTs). However, even for the same device, many inconsistent results of dynamic R ...

2023

Robust Analog Multisensory Array System for Lossy Capacitive Sensors Over Long Distances

Sandro Carrara, Andromachi Tsirou, Amar Kapic

A robust capacitive multisensory readout system is presented in this article. The system consists of a few thousand lossy capacitive-based sensors that can be modeled as a parallel connection of sensor capacitor and undesirable leakage resistance. The real ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2023

Increased Device Variability Induced by Total Ionizing Dose in 16-nm Bulk nFinFETs

Christian Enz

This article investigates the device variability induced by the total ionizing dose (TID) effects in a commercial 16-nm bulk nFinFETs, using specially designed test structures and measurement procedures aimed at maximizing the matching between devices. DC ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Enhancement-mode Multi-channel AlGaN/GaN Transistors with LiNiO Junction Tri-Gate

Elison de Nazareth Matioli, Luca Nela, Taifang Wang

Multi-channel GaN power device, consisting of stacking multiple two-dimensional-electron-gas (2DEG) channels, has been demonstrated to achieve unprecedented on-state performance while maintaining high breakdown voltage (VBR). However, the large carrier den ...

2022

A perspective on multi-channel technology for the next-generation of GaN power devices

Elison de Nazareth Matioli, Luca Nela

The outstanding properties of Gallium Nitride (GaN) have enabled considerable improvements in the performance of power devices compared to traditional silicon technology, resulting in more efficient and highly compact power converters. GaN power technology ...

AIP Publishing2022

Deep defects in InGaN LEDs: modeling the impact on the electrical characteristics

Nicolas Grandjean, Jean-François Carlin, Camille Haller

Deep defects have a fundamental role in determining the electro-optical characteristics and in the efficiency of InGaN light-emitting diodes (LEDs). However, modeling their effect on the electrical characteristics of the LED is not straightforward. In this ...

SPIE-INT SOC OPTICAL ENGINEERING2022

LiNiO Gate Dielectric with Tri-Gate Structure for High Performance E-mode GaN transistors

Elison de Nazareth Matioli, Luca Nela, Taifang Wang

In this work, a Tri-Gate AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOSHEMT) with lithium nickel oxide (LiNiO) gate dielectric is demonstrated for enhancement-mode (e-mode) operation. The high-quality of pulse-laser-deposited (P ...

IEEE2021

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Courant de fuite

Polarization-enhanced GaN Schottky barrier diodes: Ultra-thin InGaN for high breakdown voltage and low Ron

A Delay and Power Efficient Voltage Level Shifter with Low Leakage Power

Accurate Measurement of Dynamic ON-Resistance in GaN Transistors at Steady-State

Robust Analog Multisensory Array System for Lossy Capacitive Sensors Over Long Distances

Increased Device Variability Induced by Total Ionizing Dose in 16-nm Bulk nFinFETs

New Technologies to Enhance the Figures-of-Merit of GaN Power Devices

Enhancement-mode Multi-channel AlGaN/GaN Transistors with LiNiO Junction Tri-Gate

A perspective on multi-channel technology for the next-generation of GaN power devices

Deep defects in InGaN LEDs: modeling the impact on the electrical characteristics

LiNiO Gate Dielectric with Tri-Gate Structure for High Performance E-mode GaN transistors

Graph Chatbot

Chattez avec Graph Search

Robust Analog Multisensory Array System for Lossy Capacitive Sensors Over Long Distances

Increased Device Variability Induced by Total Ionizing Dose in 16-nm Bulk nFinFETs

A perspective on multi-channel technology for the next-generation of GaN power devices

New Technologies to Enhance the Figures-of-Merit of GaN Power Devices

Deep defects in InGaN LEDs: modeling the impact on the electrical characteristics

Polarization-enhanced GaN Schottky barrier diodes: Ultra-thin InGaN for high breakdown voltage and low Ron

A Delay and Power Efficient Voltage Level Shifter with Low Leakage Power

Accurate Measurement of Dynamic ON-Resistance in GaN Transistors at Steady-State

Enhancement-mode Multi-channel AlGaN/GaN Transistors with LiNiO Junction Tri-Gate

LiNiO Gate Dielectric with Tri-Gate Structure for High Performance E-mode GaN transistors