Concept

Caractéristique (électricité)

Publications associées (236)

Copper TSV-Based Die-Level Via-Last 3D Integration Process with Parylene-C Adhesive Bonding Technique

This paper presents a die-level post-CMOS processing protocol for multi-layer homogeneous 3D integration with adhesive bonding technique using parylene-C as an intermediate bonding layer and sidewall passivation material. This protocol was used to fabricat ...

2016

GaN-based superluminescent diodes with long lifetime

Nicolas Grandjean, Jean-François Carlin, Antonino Francesco Castiglia

We report on the reliability of GaN-based super-luminescent light emitting diodes (SLEDs) emitting at a wavelength of 405 nm. We show that the Mg doping level in the p-type layers has an impact on both the device electro-optical characteristics and their r ...

Spie-Int Soc Optical Engineering2016

Modeling and simulation of low power ferroelectric non-volatile memory tunnel field effect transistors using silicon-doped hafnium oxide as gate dielectric

Mihai Adrian Ionescu, Ali Saeidi, Arnab Biswas

The implementation and operation of the nonvolatile ferroelectric memory (NVM) tunnel field effect transistors with silicon-doped HfO2 is proposed and theoretically examined for the first time, showing that ferroelectric nonvolatile tunnel field effect tra ...

2016

Surface oxidation effect on the electrical behaviour of Bi2Te2Se nanoplatelets

Klaus Kern, Marko Burghard, Pascal Gehring

Charge transport in topological insulators is notably influenced by moisture and air in the surrounding environment. At present, however, little is known about the detailed composition of the oxidized surface and its impact on the electrical characteristic ...

Iop Publishing Ltd2016

Effect of metal buffer layer and thermal annealing on HfOx-based ReRAMs

Elmira Shahrabi, Igor Krawczuk, Yusuf Leblebici, Jury Sandrini, Behnoush Attarimashalkoubeh

In this paper, we investigate different methods and approaches in order to improve the electrical characteristics of Pt/HfOx/TiN ReRAM devices. We discuss the improvement of the ReRAM electrical characteristics after the insertion of a Hf and Ti buffer lay ...

Ieee2016

Computational Study on the Electrical Behavior of Silicon Nanowire Memristive Biosensors

Giovanni De Micheli, Sandro Carrara, Ioulia Tzouvadaki, Francesca Puppo

In this paper, a complete study is carried out investigating the relationship between the biosensing and the electrical characteristics of freestanding two-terminal Schottky-barrier silicon nanowires. This paper successfully reproduces computationally the ...

Institute of Electrical and Electronics Engineers2015

Modeling Memristive Biosensors

Giovanni De Micheli, Sandro Carrara, Ioulia Tzouvadaki, Francesca Puppo

In the present work, a computational study is carried out investigating the relationship between the biosensing and the electrical characteristics of two-terminal Schottky- barrier silicon nanowire devices. The model suggested successfully reproduces compu ...

2015

Graphene Negative Differential Resistance Circuit With Voltage-Tunable High Performance at Room Temperature

Mihai Adrian Ionescu, Arnaud Magrez, Antonios Bazigos, Laurent Syavoch Bernard, Pankaj Sharma

We propose, fabricate, and experimentally demonstrate a circuit based on graphene field-effect transistors (GFETs) showing enhanced negative differential resistance (NDR) characteristics at room temperature. The proposed graphene NDR (GNDR) circuit consist ...

Ieee-Inst Electrical Electronics Engineers Inc2015

Applicability of Non-Destructive Examination to Iter TF Joints Nb3Sn

Pierluigi Bruzzone, Stephen Alfred March

The Iter TF joints are of a twin-box design and the critical parameters of the overall resistance are 1) the contact between cable and termination, and 2) the resistance between two terminations. This paper describes applicability of non-destructive examin ...

2015

A Surface Potential and Current Model for Polarity-Controllable Silicon Nanowire FETs

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Jian Zhang

Silicon nanowire FET (SiNWFET) with dynamic polarity control has been experimentally demonstrated and has shown large potential in circuit applications. To fully explore its circuit-level opportunities, a physics-based compact model of the polarity-control ...

2015

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