Facteur de bruit | EPFL Graph Search

Le facteur de bruit (noise figure ou noise factor en anglais) d'un dispositif électronique quelconque, actif ou passif, quantifie la dégradation relative du rapport signal sur bruit entre sa sortie et son entrée, et ce en prenant comme hypothèse que la température ambiante est de , donc que le bruit de fond en entrée est un bruit thermique correspondant à cette température de référence de . Autrement dit, le facteur de bruit est défini comme le quotient des rapports signal sur bruit en entrée et en sortie de ce même dispositif quand le bruit en entrée est un bruit thermique à la température normalisée To=. Le facteur de bruit est généralement noté F. Description En particulier, dans le cas d'un récepteur radioélectrique supposé linéaire, on compare la puissance de bruit à la sortie à celle que l'on aurait s'il n'y avait dans ce récepteur aucune source de bruit autre que celles qui existent dans l'impédance extérieure connectée à l'entrée, supposées à une température spécif

Self-Heating Aware Design of ICs in Deep Sub-Micron FDSOI and Bulk Technologies

Can Baltaci

Bulk CMOS technologies left the semiconductor market to the novel device geometries such as FDSOI and FinFET below 30 nm, mainly due to their insufficient electrical characteristics arising from different physical limitations. These innovative solutions enabled the ongoing device scaling to continue. However, the threshold voltage and the power supply values did not shrink with the device sizes, which caused an excessive amount of heat generation in very small dimensions. With the high thermal resistivity materials used in FDSOI and FinFET, the generated heat cannot leave the device easily, which is not the case in bulk. With all of these, modern geometries brought a major problem, which is the self-heating. Due to self-heating effects (SHE), the temperature of a device rises significantly compared to its surroundings. Having very large local temperature brings important reliability issues. Moreover, the electrical behaviour of a device also changes dramatically when its temperature is very large. These facts bring the need of considering SHE and the temperature of each device separately. Nevertheless, in many of today's CAD tools, a single global temperature is applied to all of the devices. Even if some advanced simulation options are used, estimating the temperature of a device is not a simple task as it depends on many parameters. The focus of this thesis is to show the significance of SHE in the design of ICs and provide self-heating aware design guidelines. In order to achieve this, different circuit implementations are studied by considering the SHE. The study consists of two main parts, which are the reliability of the high-speed digital circuits and the performance of analog blocks where noise is critical. Moreover, detailed device-level electro-thermal simulations are performed to explain the self-heating phenomena more in detail and to perform a comparison between bulk and FDSOI. The digital part of the self-heating study is performed on two very high-speed full-custom 64-bit Kogge-Stone adders in 40 nm and 28 nm technologies. Thermal simulations are performed on these blocks to compare SHE in bulk and FDSOI geometries. The comparison of two implementations also provides the increasing significance of SHE with scaling. Extensive heating analyses are performed to find the most critical devices that are the primary heat generators. Design guidelines and solutions are proposed to flatten the temperature profiles in precharged and static logic implementations and to decrease the probability of electromigration. The analog study of the work focuses on the thermal noise performance of LNAs and SHE on the flicker noise. Since thermal noise of a device linearly depends on the temperature, it is directly affected by SHE. To show the amount of SHE on the noise figure, three common gate cascode LNAs operating at 2 GHz with different device lengths are implemented in 28 nm FDSOI. The measurements show that the self-heating effects are clearly observed on the noise figure and the performance of the blocks deviate importantly from the simulations. Moreover, the self-heating effects are significantly more in short channel devices due to their large heat density. Similar experiments are also performed on different test structures in FDSOI at lower frequencies to observe SHE on flicker noise. The experiments show that flicker noise degrades at larger temperatures and more in short channel implementations.

EPFL2018

Design and Implementation of A Rail-to-Rail 460-kS/s 10-bit SAR ADC for the Power-Efficient Capacitance Measurement

Catherine Dehollain, Shenjie Wang

This paper presents the design and implementation of a rail-to-rail 460-kS/s 10-bit successive approximation register analog-to-digital converter (ADC) for the power-efficient capacitance measurement. The specifications of ADC are optimized at system level, emphasizing the ADC following a switched-capacitor capacitance-to-voltage (C2V) converter. To be compatible to the output of C2V, a bootstrap switch with body effect reduction is adopted to provide the rail-to-rail processing ability. The charge redistribution converter is implemented by a single-ended cascaded binary-weighted capacitive digital-to-analog converter (DAC). The total area of the DAC array is not only limited by the matching behavior but also by the noise performance of C2V. To relax the settling requirement and improve the power efficiency, self-timing technique is employed which borrows extra half clock period for open-loop settling of preamps. The balance between noise and power consumption of dynamic comparator with preamps is also considered. The ADC circuit was implemented in 0.18-mu m CMOS technology and occupies an active area of 0.18 mm(2). The tested prototype achieves a signal-to-noise-plus-distortion ratio of 54 dB and a spurious-free dynamic range of 68 dB. The integral nonlinearity and differential nonlinearity are 0.5 and 0.34 least-significant-bit, respectively. The total power consumption is 21 mu W corresponding to 110 fJ/conversion-step figure of merit.

Institute of Electrical and Electronics Engineers2015

Design and Implementation of a 46-kS/s CMOS SC Dual-Mode Capacitive Sensor Interface With 50-dB SNR and 0.7% Nonlinearity

Catherine Dehollain, Shenjie Wang

This paper presents the design and implementation of a 46-kS/s CMOS switch-capacitor dual-mode capacitive sensor interface circuit for inkjet-printed capacitive humidity sensors. The specifications of the interface circuit, which includes a capacitance-to-voltage (C2V) converter combined with an analog-to-digital converter (ADC), are optimized at system level, emphasizing the C2V operation followed by the data converter. A closed form of the maximum output range of a single-stage C2V is provided to prevent cascade amplification. The gain-boosting technique is utilized in the operational transconductance amplifier design to improve the closed-loop linearity. The correlated double sampling technique attenuates the dc offset and low-frequency flicker noise from C2V. A 10-b successive approximation register ADC digitizes the output of C2V. The total area of the digital-to-analog (DAC) array is limited not only by the matching behavior, but also by the noise performance of C2V. The rail-to-rail ability is required to render the compatibility with various possible sensor inputs. A single-ended cascaded binary-weighted capacitive DAC is used to implement the charge redistribution binary search algorithm. The circuit is implemented in a 0.18- mu m CMOS technology and occupies an area of 1.2 mm(2). The tested prototype shows 0.69% nonlinearity in mode 1 and 1.38% nonlinearity in mode 2. The SNR of mode 1 is 50.1 dB and that of mode 2 is 36.5 dB, which meets the specification of 7.32 b in mode 1 and 5.32 b in mode 2. The total power consumption of the capacitive sensor interface is 70 mu W.

Institute of Electrical and Electronics Engineers2015

Self-Heating Aware Design of ICs in Deep Sub-Micron FDSOI and Bulk Technologies

Can Baltaci

EPFL2018