Nanoelectromechanical relay

A nanoelectromechanical (NEM) relay is an electrically actuated switch that is built on the nanometer scale using semiconductor fabrication techniques. They are designed to operate in replacement of, or in conjunction with, traditional semiconductor logic. While the mechanical nature of NEM relays makes them switch much slower than solid-state relays, they have many advantageous properties, such as zero current leakage and low power consumption, which make them potentially useful in next generation computing. A typical NEM Relay requires a potential on the order of the tens of volts in order to "pull in" and have contact resistances on the order of gigaohms. Coating contact surfaces with platinum can reduce achievable contact resistance to as low as 3 kΩ. Compared to transistors, NEM relays switch relatively slowly, on the order of nanoseconds. A NEM relay can be fabricated in two, three, or four terminal configurations. A three terminal relay is composed of a source (input), drain (output), and a gate (actuation terminal). Attached to the source is a cantilevered beam that can be bent into contact with the drain in order to make an electrical connection. When a significant voltage differential is applied between the beam and gate, and the electrostatic force overcomes the elastic force of the beam enough to bend it into contact with the drain, the device "pulls in" and forms an electrical connection. In the off position, the source and drain are separated by an air gap. This physical separation allows NEM relays to have zero current leakage, and very sharp on/off transitions. The nonlinear nature of the electric field, and adhesion between the beam and drain cause the device to "pull out" and lose connection at a lower voltage than the voltage at which it pulls in. This hysteresis effect means there is a voltage between the pull in voltage, and the pull out voltage that will not change the state of the relay, no matter what its initial state is.