Publications associées à Ferroélectricité

Negative Capacitance as Performance Booster for Tunnel FETs and MOSFETs: An Experimental Study

Mihai Adrian Ionescu, Christian Enz, Igor Stolichnov, Farzan Jazaeri, Ali Saeidi, Francesco Bellando

This letter reports for the first time a full experimental study of performance boosting of tunnel FETs (TFETs) and MOSFETs by negative capacitance (NC) effect. We discuss the importance of capacitance matching between a ferroelectric NC and a device capac ...

2017

Domain-wall conduction in ferroelectric BiFeO3 controlled by accumulation of charged defects

Dragan Damjanovic

Mobile charged defects, accumulated in the domain-wall region to screen polarization charges, have been proposed as the origin of the electrical conductivity at domain walls in ferroelectric materials. Despite theoretical and experimental efforts, this sce ...

Nature Publishing Group2017

Sputter Deposition Technology For Al((1-X))Sc(X)N Films With High Sc Concentration

Paul Muralt, Gabriel Christmann, Sylvain Nicolay, Stefan Mertin

Aluminium scandium nitride (Al1-xScxN) with its strongly enhanced piezoelectric response is the upcoming piezoelectric material of choice in next generation RF filters, sensors, actuators and energy harvesting devices. This paper will concentrate on the de ...

IEEE2017

Piezoelectric softening by Nb substitution in (Ba,Pb)ZrO

Nava Setter, Nicola Marzari, Dragan Damjanovic, Alberto Biancoli, David Bahati

Donor doping is commonly applied for softening of the piezoelectric and dielectric properties and facilitation of polarization switching in the ubiquitous Pb(Zr,Ti)O-3 [PZT] ceramics. The origin of the donor-dopant effects is not entirely clear. (Pb,Ba)ZrO ...

Wiley-Blackwell2017

Ferroelectric domain continuity over grain boundaries

Dragan Damjanovic, Sukriti Mantri

Formation and mobility of domain walls in ferroelectric materials is responsible for many of their electrical and mechanical properties. Domain wall continuity across grain boundaries has been observed since the 1950's and is speculated to affect the grain ...

Elsevier2017

Critical thickness of GaN on AlN: impact of growth temperature and dislocation density

Nicolas Grandjean, Pirouz Sohi, Denis Martin

Critical thickness and strain relaxation of c-plane GaN layers grown by molecular beam epitaxy on AlN were studied as a function of growth temperature and threading dislocation density (TDD). For this purpose we used AlN/sapphire templates and AlN single c ...

2017

Charge generation by ultra-stretchable elastomeric electrets

Frank Nüesch, Yee Song Ko

Novel piezoelectric elastomers are synthesized and their long term stability and piezoelectric properties are investigated. They are thin film composites of specially designed polymer nanoparticles with high glass transition temperatures (T-g) and side gro ...

Royal Soc Chemistry2017

Complex magnetic incommensurability and electronic charge transfer through the ferroelectric transition in multiferroic Co3TeO6

Helmuth Berger, Yang Zhao

Polarized and unpolarized neutron diffractions have been carried out to investigate the nature of the magnetic structures and transitions in monoclinic Co3TeO6. As the temperature is lowered below 26 K long range order develops, which is fully incommensura ...

Springer Nature2017

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Ferroélectricité

Which is the best thin film piezoelectric material?

Anisotropic spin-flip-induced multiferroic behavior in kagome Cu3Bi(SeO3)(2)O2Cl

Negative Capacitance as Performance Booster for Tunnel FETs and MOSFETs: An Experimental Study

Domain-wall conduction in ferroelectric BiFeO3 controlled by accumulation of charged defects

Sputter Deposition Technology For Al((1-X))Sc(X)N Films With High Sc Concentration

Piezoelectric softening by Nb substitution in (Ba,Pb)ZrO

Ferroelectric domain continuity over grain boundaries

Critical thickness of GaN on AlN: impact of growth temperature and dislocation density

Charge generation by ultra-stretchable elastomeric electrets

Complex magnetic incommensurability and electronic charge transfer through the ferroelectric transition in multiferroic Co3TeO6

Graph Chatbot

Chattez avec Graph Search

Critical thickness of GaN on AlN: impact of growth temperature and dislocation density

Which is the best thin film piezoelectric material?

Ferroelectric domain continuity over grain boundaries

Anisotropic spin-flip-induced multiferroic behavior in kagome Cu3Bi(SeO3)(2)O2Cl

Complex magnetic incommensurability and electronic charge transfer through the ferroelectric transition in multiferroic Co3TeO6

Domain-wall conduction in ferroelectric BiFeO3 controlled by accumulation of charged defects

Piezoelectric softening by Nb substitution in (Ba,Pb)ZrO

Charge generation by ultra-stretchable elastomeric electrets

Negative Capacitance as Performance Booster for Tunnel FETs and MOSFETs: An Experimental Study

Sputter Deposition Technology For Al((1-X))Sc(X)N Films With High Sc Concentration