Publications associées à Silicium amorphe

Font Side Solutions for c-Si Solar Cells with High-Temperature Passivating Contacts

In this work, we studied the potential of using thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) for two main purposes: introducing an n-type passivating contact at the front of a TOPCon solar cell, or simplifying the fabrication o ...

EPFL2024

Bodily implant microelectrode and bodily implant microelectrode fabrication method

Sandro Carrara, Diego Ghezzi, Gian Luca Barbruni

The present invention concerns a bodily implantable or probe device and microelectrode fabrication method comprising providing at least one silicon substrate including an electronic device or unit; providing, on a first side of the silicon substrate, at le ...

2024

HASPIDE: a project for the development of hydrogenated amorphous silicon radiation sensors on a flexible substrate

Giovanni De Cesare, Luca Massimiliano Antognini, Sylvain Dunand, Mikaël Martino, Jonathan Emanuel Thomet, Matthew James Large

Hydrogenated amorphous silicon (a-Si:H) is a material with a very good radiation hardness and with the possibility of deposition on flexible substrates like Polyimide (PI). Exploiting these properties, the HASPIDE (Hydrogenated Amorphous Silicon PIxels DEt ...

Iop Publishing Ltd2024

Characterization of a flexible a-Si:H detector for in vivo dosimetry in therapeutic x-ray beams

Sylvain Dunand, Nicolas Würsch, Luca Massimiliano Antognini, Jonathan Emanuel Thomet, Matthew James Large

BackgroundThe increasing use of complex and high dose-rate treatments in radiation therapy necessitates advanced detectors to provide accurate dosimetry. Rather than relying on pre-treatment quality assurance (QA) measurements alone, many countries are now ...

Wiley2024

Influence of ionization and cumulative effects on laser-induced crystallization in multilayer dielectrics

Yves Bellouard, Victor Carle Adrien Boureau, Ruben Ricca

Crystallization of amorphous layers has been demonstrated under various radically different laser-exposure conditions, including continuous wave (cw) and pulsed lasers. Here, we investigate the specific role of ionization in the crystallization of dielectr ...

2024

Microstructural and electrical characterization of high temperature passivating contacts for silicon solar cells

Sofia Libraro

Recombination at metal/semiconductor interfaces represents the main limitation in mainstream c-Si solar cells, primarily based on the passivated emitter and rear cell (PERC) concept. Full-area passivating contacts based on SiOx/poly-Si stacks are a candida ...

EPFL2024

Piezoelectric and elastic properties of Al0.60Sc0.40N thin films deposited on patterned metal electrodes

Luis Guillermo Villanueva Torrijo, Silvan Stettler, Marco Liffredo, Nan Xu, Federico Peretti

Sc-doped aluminum nitride (AlScN) allows for piezoelectric devices with large electromechanical coupling and the benefits increase with larger Sc doping in the film. However, with a larger Sc concentration, the process window narrows, and it is necessary t ...

2024

Stress tolerance of lightweight glass-free PV modules for vehicle integration

Christophe Ballif, Aïcha Hessler-Wyser, Antonin Faes, Jacques Levrat, Umang Bhupatrai Desai, Gianluca Cattaneo, Fahradin Mujovi, Matthieu Despeisse

Electric vehicles (EVs) currently dominate the sales in the automotive market. A big leap in this market can be made by developing a photovoltaic product that can be integrated to an EV, as it can boost the driving range of the EV while reducing the chargi ...

Edp Sciences S A2024

Direct high-temperature growth of GaN on Si using trimethylaluminum preflow enabling vertically-conducting heterostructures

Elison de Nazareth Matioli, Alessandro Floriduz

In this work, we demonstrate that GaN can be directly grown at high temperature on Si(111) substrates by metalorganic CVD without using any intentional AlN buffer, by simply employing a trimethylaluminum (TMAl) preflow. We found that n-GaN layers directly ...

Iop Publishing Ltd2024

Shortwave Infrared-Sensitive, Narrowband Organic Upconversion Devices with a Gain

Wei-Hsu Hu

Sensing and imaging of light in the shortwave infrared (SWIR) range is increasingly used in various fields, including bio-imaging, remote sensing, and semiconductor process control. SWIR-sensitive organic photodetectors (OPDs) are promising because organic ...

EPFL2024