Concept
Silicium amorphe
Publications associées (1 000)
Font Side Solutions for c-Si Solar Cells with High-Temperature Passivating Contacts
In this work, we studied the potential of using thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) for two main purposes: introducing an n-type passivating contact at the front of a TOPCon solar cell, or simplifying the fabrication o ...
EPFL2024Bodily implant microelectrode and bodily implant microelectrode fabrication method
Sandro Carrara, Diego Ghezzi, Gian Luca Barbruni
The present invention concerns a bodily implantable or probe device and microelectrode fabrication method comprising providing at least one silicon substrate including an electronic device or unit; providing, on a first side of the silicon substrate, at le ...
2024HASPIDE: a project for the development of hydrogenated amorphous silicon radiation sensors on a flexible substrate
Giovanni De Cesare, Sylvain Dunand, Jonathan Emanuel Thomet, Mikaël Martino, Luca Massimiliano Antognini, Matthew James Large
Hydrogenated amorphous silicon (a-Si:H) is a material with a very good radiation hardness and with the possibility of deposition on flexible substrates like Polyimide (PI). Exploiting these properties, the HASPIDE (Hydrogenated Amorphous Silicon PIxels DEt ...
Iop Publishing Ltd2024Characterization of a flexible a-Si:H detector for in vivo dosimetry in therapeutic x-ray beams
Sylvain Dunand, Jonathan Emanuel Thomet, Luca Massimiliano Antognini, Matthew James Large
BackgroundThe increasing use of complex and high dose-rate treatments in radiation therapy necessitates advanced detectors to provide accurate dosimetry. Rather than relying on pre-treatment quality assurance (QA) measurements alone, many countries are now ...
Hoboken2024Influence of ionization and cumulative effects on laser-induced crystallization in multilayer dielectrics
Crystallization of amorphous layers has been demonstrated under various radically different laser-exposure conditions, including continuous wave (cw) and pulsed lasers. Here, we investigate the specific role of ionization in the crystallization of dielectr ...
2024Microstructural and electrical characterization of high temperature passivating contacts for silicon solar cells
Recombination at metal/semiconductor interfaces represents the main limitation in mainstream c-Si solar cells, primarily based on the passivated emitter and rear cell (PERC) concept. Full-area passivating contacts based on SiOx/poly-Si stacks are a candida ...
EPFL2024Piezoelectric and elastic properties of Al0.60Sc0.40N thin films deposited on patterned metal electrodes
Luis Guillermo Villanueva Torrijo, Silvan Stettler, Marco Liffredo, Nan Xu, Federico Peretti
Sc-doped aluminum nitride (AlScN) allows for piezoelectric devices with large electromechanical coupling and the benefits increase with larger Sc doping in the film. However, with a larger Sc concentration, the process window narrows, and it is necessary t ...
2024Stress tolerance of lightweight glass-free PV modules for vehicle integration
Christophe Ballif, Aïcha Hessler-Wyser, Antonin Faes, Jacques Levrat, Gianluca Cattaneo, Fahradin Mujovi, Umang Bhupatrai Desai, Matthieu Despeisse
Electric vehicles (EVs) currently dominate the sales in the automotive market. A big leap in this market can be made by developing a photovoltaic product that can be integrated to an EV, as it can boost the driving range of the EV while reducing the chargi ...
Edp Sciences S A2024Direct high-temperature growth of GaN on Si using trimethylaluminum preflow enabling vertically-conducting heterostructures
Elison de Nazareth Matioli, Alessandro Floriduz
In this work, we demonstrate that GaN can be directly grown at high temperature on Si(111) substrates by metalorganic CVD without using any intentional AlN buffer, by simply employing a trimethylaluminum (TMAl) preflow. We found that n-GaN layers directly ...
Iop Publishing Ltd2024A comprehensive analysis of electron emission from a-Si:H/Al2O3 at low energies
Christophe Ballif, Jonathan Emanuel Thomet, Janina Christine Isabelle Löffler, Samira Alexandra Frey, Mohamed Belhaj
Recently developed microchannel plates (MCPs) based on amorphous silicon offer potential advantages with respect to glass based ones. In this context, secondary electron emission (SEE) at very low energies below 100 eV has been studied for relevant materia ...
IOP Publishing Ltd2023