Publications associées à BiCMOS

Integrated Wireless Power, Data Communication, and Thermal Sensing System for Autonomous Multisite Brain Implants

Implanted medical devices (IMDs) have been widely developed to support the monitoring and recording of biological data inside the body or brain. Wirelessly powered IMDs, a subset of implantable electronics, have been proposed to eliminate the limitations r ...

EPFL2024

REMOTE: Re-thinking Task Mapping on Wireless 2.5D Systems-on-Package for Hotspot Removal

David Atienza Alonso, Marina Zapater Sancho, Giovanni Ansaloni, Darong Huang, Rafael Medina Morillas

2.5D Systems-on-Package (SoPs) are composed by several chiplets placed on an interposer. They are becoming increasingly popular as they enable easy integration of electronic components in the same package and high fabrication yields. Nevertheless, they int ...

2023

Electronic readout of DNA amplification in nanoliter chambers. Strategies towards highly parallel semiconductor-based nucleic acid amplification testing

Saurabh Tomar

Polymerase chain reaction (PCR) has been the most significant driver in the field of nucleic acid testing (NAT) since its invention. Popularized as an abbreviation by the Covid-19 pandemic, PCR-based methods are the gold standard in the field of diagnostic ...

EPFL2023

Fab-to-fab and run-to-run variability in 130 nm and 65 nm CMOS technologies exposed to ultra-high TID

Jean-Michel Sallese, Adil Koukab, Gennaro Termo, Stefano Michelis

The discovery of a large fab-to-fab variability in the TID response of the CMOS technologies used in the design of ASICs for the particle detectors of the HL-LHC triggered a monitoring effort to verify the consistency of the CMOS production process over ti ...

IOP Publishing Ltd2023

Intelligent RF System for Ultra Low Power Spectrum Sensing with Machine Learning

Naci Pekçokgüler

The crowdedness of the RF spectrum constitutes problems in communication, however it also accommodates large amount of useful information. This information can be used to determine existing signals and operating contexts. However, spectrum condition varies ...

EPFL2024

Monitoring of Protein and pH Levels in Human Biofluids using FD-SOI Silicon Nanowire Arrays

Luca Capua

Medical research and technological advancements are heading towards tailored healthcare approaches that prioritize individual needs, allowing for more accurate diagnoses, more effective treatments, and better patient outcomes overall. One such approach is ...

EPFL2023

High-Performance CMOS SPAD-Based Sensors for Time-of-Flight PET Applications

Francesco Gramuglia

Detecting light, photon by photon, has been possible since the 1930s, with the invention of the photomultiplier tube (PMT). However, it is only since the 1970s, that solid-state single-photon detectors have emerged and only since 2003 that a new technology ...

EPFL2022

A 500 x 500 Dual-Gate SPAD Imager With 100% Temporal Aperture and 1 ns Minimum Gate Length for FLIM and Phasor Imaging Applications

Edoardo Charbon, Claudio Bruschini, Andrei Ardelean, Paul Mos, Arin Can Ülkü, Michael Alan Wayne

In this article, we report on SwissSPAD3 (SS3), a 500 x 500 pixel single-photon avalanche diode (SPAD) array, fabricated in 0.18-mu m CMOS technology. In this sensor, we introduce a novel dual-gate architecture with two contiguous temporal windows, or gate ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

A Low-noise CMOS SPAD Pixel with 12.1 ps SPTR and 3 ns Dead Time

Edoardo Charbon, Claudio Bruschini, Ming-Lo Wu, Francesco Gramuglia, Myung Jae Lee

In this paper, we present the first CMOS SPAD with performance comparable or better than that of the best custom SPADs, to date. The SPAD-based design, fully integrated in 180 nm CMOS technology, achieves a peak PDP of 55% at 480nm with a very broad spectr ...

2022

Quasi-vertical GaN-on-Si reverse blocking power MOSFETs

Elison de Nazareth Matioli, Riyaz Mohammed Abdul Khadar, Chao Liu, Alessandro Floriduz, Reza Soleiman Zadeh Ardebili

We demonstrate quasi-vertical reverse blocking (RB) MOSFETs on 6.7 mu m thick GaN grown on a 6 inch Si substrate by metalorganic chemical vapor deposition. The RB capability was achieved by replacing the ohmic drain with a quasi-vertical Schottky drain, re ...

IOP PUBLISHING LTD2021