Gravure ionique réactive | EPFL Graph Search

La gravure ionique réactive - ou gravure par ions réactifs - très souvent appelée par son acronyme anglophone, RIE (pour Reactive-Ion Etching), est une technique de gravure sèche des semi-conducteurs. Il s'agit d'une technique similaire, dans la mise en œuvre, à une gravure au plasma de type pulvérisation cathodique (sputtering). Cependant, dans cette technique, le plasma réagit, non seulement physiquement, mais aussi chimiquement avec la surface d'un wafer, ce qui en retire une partie ou certaines des substances qui y ont été déposées. Le plasma est généré sous basse pression (10−2 à 10−1 torr) par un ou plusieurs champs électriques voire magnétique. Les ions de haute énergie du plasma attaquent la surface du wafer et réagissent avec. Une combinaison de deux gravures Gravure (microfabrication) La gravure ionique réactive est un hybride entre les deux grandes catégories de gravures :

Les gravures dites « chimiques », où le phénomène de gravure se fait par réaction chim

Shining Diamond: from Micro- and Nano-Engineering to Quantum Photonics

Sichen Mi

The discovery of room-temperature single photon emission from color centers in diamond has in recent years boosted research interest in this renowned material in photonics and quantum community and beyond. Following understanding some basic principles of how the color centers work, new challenges arose: designing and fabricating real devices that leverage the unrivaled properties that diamond possesses. Due to this material's extreme physical hardness and its chemical resistance to etchants, the established semiconductor technologies cannot straightforwardly answer to the call for scalable and reliable fabrication of micro- and nano-photonic devices in single crystal diamond. In this thesis, we first demonstrate an unconventional polishing protocol with ion beam etching, which makes possible wafer-scale fine finishing of diamond substrates, the starting point for any subsequent processing. Following this we present the experimental observation of self-organized nanotextures on diamond induced by ion beam irradiation, a lithography-free approach for nanoengineering periodic structures. Regarding device fabrication, we obtained free-standing micro- and nano-photonic structures using angled reactive ion etching, facilitated by a novel and reproducible Faraday cage design. We also propose possible designs to interconnect individual components in hope of realizing a photonic integrated circuit in the future. Last but not least, we present spectroscopic characterization of single and ensemble color centers either grown by microwave plasma chemical vapor deposition, or fabricated by ion implantation with subsequent high-temperature annealing, which are the fundamental building blocks for quantum applications. Photoluminescence spectra that, to our knowledge, are not seen in literature were recorded for ensemble silicon-vacancy centers at cryogenic temperature, signifying potentially unknown mechanism for tuning the optical transitions, and unexplored possibilities with this exciting material platform for quantum technologies.

EPFL2021

Amplification in epitaxially grown Er:(Gd, LU)(2)O-3 waveguides for active integrated optical devices

Sebastian Heinrich, Yury Kuzminykh

Monocrystalline lattice matched Er(0.6 at. %): (Gd, LU)(2)O-3 films with nearly atomically flat surfaces and thicknesses up to 3 Am have been grown on Y2O3 substrates using pulsed laser deposition. The emission cross sections were comparable with the ones of Er:Y2O3 bulk crystals, showing only a marginal spectral broadening. Rib channel waveguiding could be demonstrated after structuring the films with reactive ion etching. Gain measurements have been performed and the results compared with a theoretical gain spectrum. A gain of 5.9 dB/cm could be measured at 1535.5 nm through in-band pumping at 1480 nm. The scattering losses in such a 7 mm long rib waveguide have been determined to be below 4.4 dB at 632.8 nm. An extrapolation to the gain wavelength with the lambda(-4)-Rayleigh law of scattering resulted in losses of 0.2 dB/cm at 1.5 mu m. (C) 2008 Optical Society of America

2008

Development of novel SU-8 based nanoimprint lithography

Shenqi Xie, Rong Yang

We present two kinds of novel nanoimprint lithography techniques based on SU-8 photoresist with single layer and tri-layer approaches. The imprint templates with high aspect ratio were first fabricated by electron beam lithography (EBL) and reactive ion etch (RIE), and then duplicated by the SU-8/SiO2/PMMA tri-layer technique we developed. Imprint properties such as pressure and temperature are determined to fabricate different nanostructures with various imprint depth. The developed processes, which provide us the capability to fabricate both imprinted nanostructures on resist and transferred nanopatterns on substrate with high volume and low cost, are further applied in producing high density gratings, planar chiral photonic metamaterials, and nanofluidics channels.

2008

Shining Diamond: from Micro- and Nano-Engineering to Quantum Photonics

Sichen Mi

EPFL2021