Publications associées à Diode

Polarization-enhanced GaN Schottky barrier diodes: Ultra-thin InGaN for high breakdown voltage and low Ron

Elison de Nazareth Matioli, Alessandro Floriduz, Zheng Hao

In this work, we present a concept that leverages the strong piezoelectric polarization field in InGaN, which counteracts the external electric field at reverse bias. We show that despite the smaller InGaN band-gap and lower critical electric field, its st ...

2024

Impact of beam-coupling impedance on the Schottky spectrum of bunched beam

Tatiana Pieloni, Nicolas Frank Mounet, Christophe Emmanuel R. Lannoy

The Schottky monitors of the Large Hadron Collider (LHC) can be used for non-invasive beam diagnostics to estimate various bunch characteristics, such as tune, chromaticity, bunch profile or synchrotron frequency distribution. However, collective effects, ...

Iop Publishing Ltd2024

HASPIDE: a project for the development of hydrogenated amorphous silicon radiation sensors on a flexible substrate

Giovanni De Cesare, Sylvain Dunand, Jonathan Emanuel Thomet, Mikaël Martino, Luca Massimiliano Antognini, Matthew James Large

Hydrogenated amorphous silicon (a-Si:H) is a material with a very good radiation hardness and with the possibility of deposition on flexible substrates like Polyimide (PI). Exploiting these properties, the HASPIDE (Hydrogenated Amorphous Silicon PIxels DEt ...

Iop Publishing Ltd2024

SPAD Developed in 55 nm Bipolar-CMOS-DMOS Technology Achieving Near 90% Peak PDP

Edoardo Charbon, Claudio Bruschini, Ekin Kizilkan, Pouyan Keshavarzian, Won Yong Ha, Francesco Gramuglia, Myung Jae Lee

We present a single-photon avalanche diode (SPAD) developed in 55 nm bipolar-CMOS-DMOS (BCD) technology, which achieves high photon detection probability (PDP) while its breakdown voltage is lower than 20 V. To enhance the PDP performance, the SPAD junctio ...

Ieee-Inst Electrical Electronics Engineers Inc2024

Doping Engineering for PDP Optimization in SPADs Implemented in 55-nm BCD Process

Edoardo Charbon, Claudio Bruschini, Myung Jae Lee, Feng Liu

We introduce a new family of single-photon avalanche diodes (SPADs) with enhanced depletion regions in a 55-nm Bipolar-CMOS-DMOS (BCD) technology. We demonstrate how to systematically engineer doping profiles in the main junction and in deep p-well layers ...

Piscataway2024

A thermotropic liquid crystal enables efficient and stable perovskite solar modules

Mohammad Khaja Nazeeruddin, Yong Ding, Bin Ding, Cheng Liu, Jian Xu

Perovskite solar cells have seen impressive progress in performance and stability, yet maintaining efficiency while scaling area remains a challenge. Here we find that additives commonly used to passivate large-area perovskite films often co-precipitate du ...

Berlin2024

Compact and effective photon-resolved image scanning microscope

Giorgio Tortarolo

Fluorescence confocal laser-scanning microscopy (LSM) is one of the most popular tools for life science research. This popularity is expected to grow thanks to single-photon array detectors tailored for LSM. These detectors offer unique single-photon spati ...

Spie-Soc Photo-Optical Instrumentation Engineers2024

Demonstration of a Plasmonic Nonlinear Pseudodiode

Olivier Martin, Karim Achouri, Andrei Kiselev, Sergejs Boroviks

We demonstrate a nonlinear plasmonic metasurface that exhibits strongly asymmetric second-harmonic generation: nonlinear scattering is efficient upon excitation in one direction, and it is substantially suppressed when the excitation direction is reversed, ...

AMER CHEMICAL SOC2023

Method for operating a frequency agile tunable self-injection locking laser system and self-injection locking laser system

Tobias Kippenberg, Anat Siddharth, Grigorii Likhachev

The invention relates to a Method for operating a frequency agile tunable self-injection locking laser system being formed by a laser device coupled to at least one optical resonator, wherein a diode current of a laser diode of the laser device is controll ...

2023

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Diode

Polarization-enhanced GaN Schottky barrier diodes: Ultra-thin InGaN for high breakdown voltage and low Ron

Impact of beam-coupling impedance on the Schottky spectrum of bunched beam

HASPIDE: a project for the development of hydrogenated amorphous silicon radiation sensors on a flexible substrate

SPAD Developed in 55 nm Bipolar-CMOS-DMOS Technology Achieving Near 90% Peak PDP

Doping Engineering for PDP Optimization in SPADs Implemented in 55-nm BCD Process

A thermotropic liquid crystal enables efficient and stable perovskite solar modules

Compact and effective photon-resolved image scanning microscope

Investigations about the Chemistry of Tetraarylethene- and Iridium-Based Luminophores

Demonstration of a Plasmonic Nonlinear Pseudodiode

Method for operating a frequency agile tunable self-injection locking laser system and self-injection locking laser system

Graph Chatbot

Chattez avec Graph Search

Doping Engineering for PDP Optimization in SPADs Implemented in 55-nm BCD Process

SPAD Developed in 55 nm Bipolar-CMOS-DMOS Technology Achieving Near 90% Peak PDP

A thermotropic liquid crystal enables efficient and stable perovskite solar modules

Demonstration of a Plasmonic Nonlinear Pseudodiode

Investigations about the Chemistry of Tetraarylethene- and Iridium-Based Luminophores

Method for operating a frequency agile tunable self-injection locking laser system and self-injection locking laser system

Polarization-enhanced GaN Schottky barrier diodes: Ultra-thin InGaN for high breakdown voltage and low Ron

HASPIDE: a project for the development of hydrogenated amorphous silicon radiation sensors on a flexible substrate