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A Modular, Direct Time-of-Flight Depth Sensor in 45/65-nm 3-D-Stacked CMOS Technology

Edoardo Charbon, Myung Jae Lee, Preethi Padmanabhan, Augusto Ronchini Ximenes

This article introduces a modular, direct time-of-flight (TOF) depth sensor. Each module is digitally synthesized and features a 2

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8) single-photon avalanche diode (SPAD) pixel array, an edge-sensitive decision tree, a shared time-to ...

2019

Diode

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Quantum imaging with SPAD arrays

Fluorescence lifetime imaging with a single-photon SPAD array using long overlapping gates: an experimental and theoretical study

A Modular, Direct Time-of-Flight Depth Sensor in 45/65-nm 3-D-Stacked CMOS Technology

Transient Current Technique characterization of bonded interfaces for monolithic silicon radiation detectors

MoS2/VO2 vdW heterojunction devices: Tunable rectifiers, photodiodes and field effect transistors

Vacuum circuit breaker modelling for the assessment of transient recovery voltages: Application to various network configurations

Uni-directional GaN-on-Si MOSHEMTs with High Reverse-Blocking Voltage based on Nanostructured Schottky Drain

Negative capacitance tunnel F£Ts: Experimental demonstration of outstanding simultaneous boosting of on-current, transconductance, overdrive, and swing

Development of a monolithic near-field optomechanical system

645 V Quasi-Vertical GaN Power Transistors on silicon substrates

Quantum imaging with SPAD arrays

Fluorescence lifetime imaging with a single-photon SPAD array using long overlapping gates: an experimental and theoretical study

A Modular, Direct Time-of-Flight Depth Sensor in 45/65-nm 3-D-Stacked CMOS Technology

Uni-directional GaN-on-Si MOSHEMTs with High Reverse-Blocking Voltage based on Nanostructured Schottky Drain

Negative capacitance tunnel F£Ts: Experimental demonstration of outstanding simultaneous boosting of on-current, transconductance, overdrive, and swing

Transient Current Technique characterization of bonded interfaces for monolithic silicon radiation detectors

Vacuum circuit breaker modelling for the assessment of transient recovery voltages: Application to various network configurations

MoS2/VO2 vdW heterojunction devices: Tunable rectifiers, photodiodes and field effect transistors

645 V Quasi-Vertical GaN Power Transistors on silicon substrates

Development of a monolithic near-field optomechanical system