Publications related to Diode | EPFL Graph Search

Quantum imaging with SPAD arrays

Edoardo Charbon, Claudio Bruschini, Ivan Michel Antolovic

We present a novel quantum imaging modality based on photon correlation measurement with a single photon avalanche diode (SPAD) array in a confocal setup. This enables unprecedented simplicity in realization of photon correlation measurements, demonstrated ...

2019

Fluorescence lifetime imaging with a single-photon SPAD array using long overlapping gates: an experimental and theoretical study

Edoardo Charbon, Claudio Bruschini, Andrei Ardelean, Arin Can Ülkü

Developing large arrays of single-photon avalanche diodes (SPADs) with on-chip time-correlated single-photon counting (TCSPC) capabilities continues to be a difficult task due to stringent silicon real estate constraints, high data rates and system complex ...

2019

A Modular, Direct Time-of-Flight Depth Sensor in 45/65-nm 3-D-Stacked CMOS Technology

Edoardo Charbon, Myung Jae Lee, Preethi Padmanabhan, Augusto Ronchini Ximenes

This article introduces a modular, direct time-of-flight (TOF) depth sensor. Each module is digitally synthesized and features a 2

\times

(8

\times

8) single-photon avalanche diode (SPAD) pixel array, an edge-sensitive decision tree, a shared time-to ...

2019

Transient Current Technique characterization of bonded interfaces for monolithic silicon radiation detectors

Jacopo Bronuzzi

This thesis aims at demonstrating a novel technique for the characterization of interfaces obtained by a CMOS-compatible Surface Activated Bonding (SAB) process between silicon wafers. This enables the optimization of the two main components of monolithic ...

EPFL2018

MoS2/VO2 vdW heterojunction devices: Tunable rectifiers, photodiodes and field effect transistors

Olivier Martin, Mihai Adrian Ionescu, Arnaud Magrez, Andreas Schueler, Anna Krammer, Emanuele Andrea Casu, Chen Yan, Nicolò Oliva

In this work we report a new class of ultra-thin film devices based on n-n van der Waals (vdW) heteroj unctions of MoS2 and VO2, which show remarkable tunable characteristics. The favorable band alignment combined with the sharp and clean vdW interface det ...

2018

Vacuum circuit breaker modelling for the assessment of transient recovery voltages: Application to various network configurations

Mario Paolone, Carlo Alberto Nucci

Vacuum circuit breakers (VCBs) are widely used for medium voltage applications when low maintenance, long operating life, and large number of allowable switching cycles are required. The accurate estimation of the transient recovery voltages (TRVs) associa ...

Elsevier2018

Uni-directional GaN-on-Si MOSHEMTs with High Reverse-Blocking Voltage based on Nanostructured Schottky Drain

Elison de Nazareth Matioli, Jun Ma

In this work we present uni-directional GaN-on-Si MOSHEMTs with state-of-the-art reverse-blocking performance. We integrated tri-anode Schottky barrier diodes (SBDs) with slanted tri-gate field plates (FPs) as the drain electrode, and achieved a high rever ...

IEEE2018

Negative capacitance tunnel F£Ts: Experimental demonstration of outstanding simultaneous boosting of on-current, transconductance, overdrive, and swing

Mihai Adrian Ionescu, Igor Stolichnov, Farzan Jazaeri, Ali Saeidi

This paper demonstrates and experimentally reports the highest ever performance boosting in strained silicon-nanowire homojunction TFETs with negative capacitance, provided by matched PZT capacitors. Outstanding enhancements of I on , g m , and overdrive a ...

IEEE2018

Development of a monolithic near-field optomechanical system

Ryan Daniel Schilling

In the same year as Einstein's annus mirabilis, English engineer and physicist John Flemming patented the first rectifying diode, which he called the "Flemming valve". Einstein's work on the photoelectric effect would change our understanding of the nature ...

EPFL2018

645 V Quasi-Vertical GaN Power Transistors on silicon substrates

Elison de Nazareth Matioli, Riyaz Mohammed Abdul Khadar, Chao Liu

In this paper, we present GaN-on-Si vertical transistors consisting of a 6.7 pm thick n-p-n heterostructure grown on 6-inch silicon substrates by MOCVD. The fabricated vertical trench gate MOSFETs exhibited E-mode operation with a threshold voltage of 3.3 ...

IEEE2018

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Quantum imaging with SPAD arrays

Fluorescence lifetime imaging with a single-photon SPAD array using long overlapping gates: an experimental and theoretical study

A Modular, Direct Time-of-Flight Depth Sensor in 45/65-nm 3-D-Stacked CMOS Technology

Transient Current Technique characterization of bonded interfaces for monolithic silicon radiation detectors

MoS2/VO2 vdW heterojunction devices: Tunable rectifiers, photodiodes and field effect transistors

Vacuum circuit breaker modelling for the assessment of transient recovery voltages: Application to various network configurations

Uni-directional GaN-on-Si MOSHEMTs with High Reverse-Blocking Voltage based on Nanostructured Schottky Drain

Negative capacitance tunnel F£Ts: Experimental demonstration of outstanding simultaneous boosting of on-current, transconductance, overdrive, and swing

Development of a monolithic near-field optomechanical system

645 V Quasi-Vertical GaN Power Transistors on silicon substrates

Quantum imaging with SPAD arrays

Transient Current Technique characterization of bonded interfaces for monolithic silicon radiation detectors

Negative capacitance tunnel F£Ts: Experimental demonstration of outstanding simultaneous boosting of on-current, transconductance, overdrive, and swing

645 V Quasi-Vertical GaN Power Transistors on silicon substrates

Fluorescence lifetime imaging with a single-photon SPAD array using long overlapping gates: an experimental and theoretical study

A Modular, Direct Time-of-Flight Depth Sensor in 45/65-nm 3-D-Stacked CMOS Technology

MoS2/VO2 vdW heterojunction devices: Tunable rectifiers, photodiodes and field effect transistors

Vacuum circuit breaker modelling for the assessment of transient recovery voltages: Application to various network configurations

Uni-directional GaN-on-Si MOSHEMTs with High Reverse-Blocking Voltage based on Nanostructured Schottky Drain

Development of a monolithic near-field optomechanical system