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Field-effect transistors (FETs) have established themselves as a leading platform for electrical detection of chemical and biological species. Their advantages over other optical, mechanical sensing platforms are attributed to being miniaturizable, mechani ...
Conventional device scaling has been the main guiding principle of the MOS device engineering over these past years. However, this aggressive scaling would be eventually limited due to the inability to remove the heat generated by MOSFET devices. The power ...
The growth of information technology has been sustained by the miniaturization of Complementary Metal-Oxide-Semiconductor (CMOS) Field-Effect Transistors (FETs), with the number of devices per unit area constantly increasing, as exemplified by Mooreâs la ...
Two-dimensional (2D) materials have received tremendous research attention recently, as they possess peculiar physical properties in their monolayer and few-layer forms, which further lead to novel applications. A wide range of 2D materials covers insulato ...
Transistors are the fundamental elements in Integrated Circuits (IC). The development of transistors significantly improves the circuit performance. Numerous technology innovations have been adopted to maintain the continuous scaling down of transistors. W ...
Two-dimensional (2D) semiconductors such as single- and few-layer molybdenum disulphide(MoS2) are promising building blocks for prospect flexible, transparent and low power electronics. Due to an electronic bandgap of the order of ~1.8 eV and atomic-scale ...
We report on p- and n-type organic self-assembled monolayer held effect transistors. On the base of quaterthiophene and fullerene units, multifunctional molecules were synthesized, which have the ability to self-assemble and provide multifunctional monolay ...
We propose a novel tunnel field-effect transistor (TFET) concept called the electron–hole bilayer TFET (EHBTFET). This device exploits the carrier tunneling through a bias-induced electron–hole bilayer in order to achieve improved switching and higher driv ...
We report the large-signal performance of high electron mobility transistors (HEMTs) fabricated on GaN- and AlN-capped AlInN/GaN epilayers grown on semi-insulating SiC substrates. Large-signal measurements at 10 and 40 GHz are presented with both gate and ...
In the present work we intend to assess the readout feasibility of Avalanche Photodiode (APD) detectors via long signal lines for the development of a combined small-animal PET-MR prototype based on the ClearPEM technology. The detection performance of a L ...
