Finite element analysis and experiments on a silicon membrane actuated by an epitaxial PZT thin film for localized-mass sensing applications
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Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2007
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Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2009
Abstract—A common problem when using piezoceramic actuators for precise positioning is their hysteresis. Either external sensors such as capacitive or inductive probes, optical sensors or strain gauges are commonly used. The latter are the most favorable s ...
The paper reviews different aspects of deposition, integration, and device fabrication of PbZrxTi1-xO3 (PZT) films for application in micromechanical systems. The deposition of such films and the principal processes for their integration onto silicon subst ...
For the development of a 1 MW, 140 GHz gyrotron for CW operation which will be installed at the stellarator facility Wendelstein 7-X at IPP Greifswald, a collaboration between different European research institutes and an industrial company has been establ ...
The in-situ growth of PbZrxTi1-xO3 (PZT) and PbTiO3 (PT) thin films by reactive sputter deposition has been investigated for applications with silicon substrates. In-situ deposition from three simultaneously operating magnetron sources was applied. At the ...
For micromechanical applications, piezoelectric PbZrTO3 (PZT) thin films have been deposited on metallised Si3N4/SiO2 layers on Si wafers. Films with compositions near the morphotropic phase boundary (x=0.53) were prepared at 600°C using a multitarget, in- ...
